利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.023 秒)

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20170025459A1

    公开(公告)日：2017-01-26

    申请号：US15283656

    申请日：2016-10-03

    申请人： SK hynix Inc.

    发明人： Do-Hwan KIM ,  Jong-Chae KIM ,  Kyoung-Oug RO ,  Il-Ho SONG

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

    摘要： An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

    摘要翻译： 图像传感器包括：基板，包括像素阵列区域和像素阵列区域的表面高于逻辑区域的表面的逻辑区域;以及形成在所述逻辑区域的所述基板上并具有表面的遮光图案 在与基板的表面基本相同的平面上。

    ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR
    2.
    发明申请
    ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR 有权
    隔离结构及其形成方法，以及包括隔离结构的图像传感器和用于制作图像传感器的方法

    公开(公告)号：US20140353468A1

    公开(公告)日：2014-12-04

    申请号：US14010960

    申请日：2013-08-27

    申请人： SK hynix Inc.

    发明人： Chung-Seok CHOI ,  Jang-Won MOON ,  Jong-Chae KIM ,  Do-Hwan KIM ,  Kyoung-Oug RO

    IPC分类号： H01L27/146 ,  H01L29/06

    CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/0646 ,  H01L29/0649

    摘要： An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

    摘要翻译： 隔离结构及其形成方法。 隔离结构包括第一隔离结构，其包括形成在衬底中的沟槽中的绝缘层和形成在第一隔离结构上的第二隔离结构。 第二隔离结构包括在衬底中形成的第一杂质区，具有第一杂质掺杂浓度的第一杂质区和形成在第一杂质区周围的第二杂质区，第二杂质区具有第二杂质掺杂浓度， 大于第一掺杂浓度。

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    3.
    发明申请
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20150295001A1

    公开(公告)日：2015-10-15

    申请号：US14556962

    申请日：2014-12-01

    申请人： SK hynix Inc.

    发明人： Chung-Seok CHOI ,  Dong-Hyun WOO ,  Jong-Chae KIM

    IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14685

    摘要： An image sensor includes: a substrate including a photoelectric conversion region; a charge control layer overlapping with the photoelectric conversion region that is formed over the substrate; an inter-layer dielectric layer including lines that are formed over the charge control layer; and color filters and a light condensing pattern formed over the inter-layer dielectric layer to correspond to the photoelectric conversion region.

    摘要翻译： 图像传感器包括：基板，包括光电转换区域; 与形成在所述基板上的所述光电转换区域重叠的电荷控制层; 包括形成在所述电荷控制层上的线的层间电介质层; 以及形成在层间电介质层上的滤光器和聚光图案，以对应于光电转换区域。

    IMAGE SENSOR HAVING TEST PATTERN AND OFFSET CORRECTION METHOD THEREOF
    7.
    发明申请
    IMAGE SENSOR HAVING TEST PATTERN AND OFFSET CORRECTION METHOD THEREOF 有权

    公开(公告)号：US20180035107A1

    公开(公告)日：2018-02-01

    申请号：US15454531

    申请日：2017-03-09

    申请人： SK hynix Inc.

    发明人： Yun-Hui YANG ,  Donghyun WOO ,  Jong-Chae KIM

    IPC分类号： H04N17/00

    CPC分类号： H04N17/002 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641

    摘要： An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 有权
    图像传感器及其制造方法

    公开(公告)号：US20150123226A1

    公开(公告)日：2015-05-07

    申请号：US14106820

    申请日：2013-12-15

    申请人： SK hynix Inc.

    发明人： Chung-Seok CHOI ,  Jong-Chae KIM ,  Do-Hwan KIM

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

    摘要： An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.

    摘要翻译： 图像传感器包括形成在基板中的光电转换区域，形成在基板前侧的层间绝缘层，掺杂有杂质并形成在基板的背面上的含碳层，以及滤色器和 微透镜形成在含碳层上。