公开(公告)号：US20150130003A1

公开(公告)日：2015-05-14

申请号：US14292401

申请日：2014-05-30

Applicant: SK hynix Inc.

Inventor： Do-Hwan KIM ,  Dong-Hyun WOO ,  Jong-Chae KIM ,  Chung-Seok CHOI

IPC: H01L27/146

CPC classification number: H01L27/14638 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.

Abstract translation: 图像传感器包括：基板，包括光电转换区域，设置在基板的背面并适于产生磁场的磁性层;以及布置在磁性层上的滤色器和微透镜。

公开(公告)号：US20140353468A1

公开(公告)日：2014-12-04

申请号：US14010960

申请日：2013-08-27

Applicant: SK hynix Inc.

Inventor： Chung-Seok CHOI ,  Jang-Won MOON ,  Jong-Chae KIM ,  Do-Hwan KIM ,  Kyoung-Oug RO

IPC: H01L27/146 ,  H01L29/06

CPC classification number: H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/0646 ,  H01L29/0649

Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

Abstract translation: 隔离结构及其形成方法。 隔离结构包括第一隔离结构，其包括形成在衬底中的沟槽中的绝缘层和形成在第一隔离结构上的第二隔离结构。 第二隔离结构包括在衬底中形成的第一杂质区，具有第一杂质掺杂浓度的第一杂质区和形成在第一杂质区周围的第二杂质区，第二杂质区具有第二杂质掺杂浓度， 大于第一掺杂浓度。

公开(公告)号：US20150187835A1

公开(公告)日：2015-07-02

申请号：US14304642

申请日：2014-06-13

Applicant: SK hynix Inc.

Inventor： Do-Hwan KIM ,  Yong-Suk CHUNG ,  Jong-Chae KIM ,  Chung-Seok CHOI

IPC: H01L27/146 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L27/14612 ,  H01L27/14616 ,  H01L29/408

Abstract: A transistor includes a substrate and a gate insulation layer formed on the substrate having a negative charge storage layer with a fixed negative charge to induce a buried channel in the substrate. A gate electrode is formed on the gate insulation layer.

Abstract translation: 晶体管包括基板和形成在具有固定负电荷的负电荷存储层的基板上的栅极绝缘层，以在基板中引入掩埋沟道。 在栅极绝缘层上形成栅电极。

公开(公告)号：US20150123226A1

公开(公告)日：2015-05-07

申请号：US14106820

申请日：2013-12-15

Applicant: SK hynix Inc.

Inventor： Chung-Seok CHOI ,  Jong-Chae KIM ,  Do-Hwan KIM

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.

Abstract translation: 图像传感器包括形成在基板中的光电转换区域，形成在基板前侧的层间绝缘层，掺杂有杂质并形成在基板的背面上的含碳层，以及滤色器和 微透镜形成在含碳层上。

公开(公告)号：US20150295001A1

公开(公告)日：2015-10-15

申请号：US14556962

申请日：2014-12-01

Applicant: SK hynix Inc.

Inventor： Chung-Seok CHOI ,  Dong-Hyun WOO ,  Jong-Chae KIM

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L27/14621 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14685

Abstract: An image sensor includes: a substrate including a photoelectric conversion region; a charge control layer overlapping with the photoelectric conversion region that is formed over the substrate; an inter-layer dielectric layer including lines that are formed over the charge control layer; and color filters and a light condensing pattern formed over the inter-layer dielectric layer to correspond to the photoelectric conversion region.

Abstract translation: 图像传感器包括：基板，包括光电转换区域; 与形成在所述基板上的所述光电转换区域重叠的电荷控制层; 包括形成在所述电荷控制层上的线的层间电介质层; 以及形成在层间电介质层上的滤光器和聚光图案，以对应于光电转换区域。

公开(公告)号：US20150008553A1

公开(公告)日：2015-01-08

申请号：US14071244

申请日：2013-11-04

Applicant: SK hynix Inc.

Inventor： Chung-Seok CHOI ,  Jong-Chae KIM ,  Do-Hwan KIM

IPC: H01L31/0232

CPC classification number: H01L31/0232 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.

Abstract translation: 图像传感器包括形成在包括前侧和后侧的基板上的传输门，形成在传输门一侧的基板中的光电转换区，形成在光电转换区中的沟槽，并且具有位于背面的沟槽入口 衬底的背面，以及形成在衬底的背面上的滤色器。