公开(公告)号：US20220270685A1

公开(公告)日：2022-08-25

申请号：US17393142

申请日：2021-08-03

申请人： SK hynix Inc.

发明人： Hee Youl LEE ,  Jeong Su LEE

IPC分类号： G11C16/10 ,  G11C16/04 ,  G11C16/34

摘要： A semiconductor memory device includes a memory block, a peripheral circuit, and control logic. The memory block includes a plurality of string groups respectively connected to a corresponding source select line among a plurality of source select lines. The peripheral circuit is configured to perform a program operation of storing data within the memory block. The control logic controls the program operation of the peripheral circuit. The plurality of source select lines are grouped into a plurality of source select line groups. The control logic controls the peripheral circuit to increase a voltage of a first source select line group including a source select line connected to a selected string group to a first level among the plurality of source select line groups.