公开(公告)号：US20210397362A1

公开(公告)日：2021-12-23

申请号：US17083500

申请日：2020-10-29

Applicant: SK hynix Inc.

Inventor： Young Gyun KIM ,  Ki Woong LEE ,  Sang Jin LEE

IPC: G06F3/06

Abstract: The present technology relates to a semiconductor device and a method of operating the same. The semiconductor device includes a sensing voltage generator configured to generate a temperature voltage having a voltage level determined according to an internal temperature of the semiconductor device and a reference voltage having a constant voltage level, a code generator configured to generate a temporary code including a sensing code value corresponding to the internal temperature and a boundary value indicating whether the internal temperature is included in a boundary portion associated with at least one temperature range corresponding to the sensing code value based on the temperature voltage and the reference voltage, and a code correction component configured to generate a correction code for generating an operation voltage of the semiconductor device by correcting the temporary code, based on the temporary code and a previously generated correction code.