公开(公告)号：US20210407607A1

公开(公告)日：2021-12-30

申请号：US17155655

申请日：2021-01-22

Applicant: SK hynix Inc.

Inventor： Ju Yong KIM ,  Young Gyun KIM ,  Ki Woong LEE

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

Abstract: A memory system is provided to include a memory device and a memory controller configured to control the memory device. The memory device includes a first data latch storing information about a state of the memory cell and is configured to: execute a first verification operation and a second verification operation on the memory cell in response to receiving, from the memory controller, a suspend command to suspend a program operation being performed on the memory cell; store, in the first data latch, a temporary value obtained based on a result value of the first verification operation and a result value of the second verification operation; and execute, a resumption command to resume the program operation, a third verification operation, and restore the result value of the first verification operation and the result value of the second verification operation.

公开(公告)号：US20220301650A1

公开(公告)日：2022-09-22

申请号：US17461749

申请日：2021-08-30

Applicant: SK hynix Inc.

Inventor： Ki Woong LEE ,  Chan Young OH

IPC: G11C29/12 ,  G11C29/42 ,  G11C29/44 ,  G11C16/26 ,  G11C16/34

Abstract: The present technology provides a method of operating a controller that controls a semiconductor memory device including a plurality of memory cells. The method of operating the controller includes controlling the semiconductor memory device to perform a read operation on selected memory cells among the plurality of memory cells by using a read voltage set including at least one read voltage, receiving read data from the semiconductor memory device, and changing at least one read voltage included in the read voltage set by counting, based on the read data, a number of memory cells each having a threshold voltage lower than the at least one read voltage included in the read voltage set.

公开(公告)号：US20210397362A1

公开(公告)日：2021-12-23

申请号：US17083500

申请日：2020-10-29

Applicant: SK hynix Inc.

Inventor： Young Gyun KIM ,  Ki Woong LEE ,  Sang Jin LEE

IPC: G06F3/06

Abstract: The present technology relates to a semiconductor device and a method of operating the same. The semiconductor device includes a sensing voltage generator configured to generate a temperature voltage having a voltage level determined according to an internal temperature of the semiconductor device and a reference voltage having a constant voltage level, a code generator configured to generate a temporary code including a sensing code value corresponding to the internal temperature and a boundary value indicating whether the internal temperature is included in a boundary portion associated with at least one temperature range corresponding to the sensing code value based on the temperature voltage and the reference voltage, and a code correction component configured to generate a correction code for generating an operation voltage of the semiconductor device by correcting the temporary code, based on the temporary code and a previously generated correction code.