公开(公告)号：US09054304B2

公开(公告)日：2015-06-09

申请号：US13791468

申请日：2013-03-08

Applicant: SK hynix Inc.

Inventor： Seung Yun Lee ,  Hae Chan Park ,  Myoung Sub Kim ,  Sung Bin Hong ,  Se Ho Lee ,  Jung Won Seo

IPC: H01L21/20 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/16 ,  H01L45/1683

Abstract: A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

Abstract translation: 提供能够防止干扰的电阻式存储装置。 电阻式存储器件包括形成在半导体衬底上的下电极，设置在下电极上的可变电阻器，设置在可变电阻器上的上电极以及被配置为使可变电阻器绝缘的层间绝缘层。 层间绝缘层的至少一部分中可以包括气隙区域。