公开(公告)号：US10438989B2

公开(公告)日：2019-10-08

申请号：US15801418

申请日：2017-11-02

Applicant: SK hynix Inc.

Inventor： Yeounsoo Kim ,  Donghyun Woo

IPC: H01L27/148 ,  H01L31/02 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/00 ,  H04N5/369

Abstract: A stack-type image sensor include a first substrate comprising a photoelectric conversion element and a storage transistor connecting the photoelectric conversion element to a charge storage element; and a second substrate comprising a transfer transistor connecting the charge storage element to a floating diffusion, wherein the first substrate and the second substrate are stacked. The charge storage element comprises: a first electrode and a second electrode positioned adjacent to the first electrode and having a sidewall facing a sidewall of the first electrode, wherein the first electrodes and the second electrodes comprise at least one bonding pad formed in the first or second substrate; and a dielectric layer inserted between the sidewall of the first electrode and the sidewall of the second electrode, which face each other.