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公开(公告)号：US20230326523A1
公开(公告)日：2023-10-12
申请号：US18188332
申请日：2023-03-22
申请人： SK hynix Inc. , Foundation for Research and Business, Seoul National University of Science and Technology , INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
发明人： Tae Jung HA , Soo Gil KIM , Jeong Hwan SONG , Byung Joon CHOI , Ha Young LEE
CPC分类号： G11C13/003 , G11C11/1659 , G11C2213/72
摘要： Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.
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公开(公告)号：US20180182467A1
公开(公告)日：2018-06-28
申请号：US15699854
申请日：2017-09-08
发明人： Sung Ho KANG , Joo Young KIM , Kee Won CHO , Ha Young LEE , Sang Doo KIM , Hongshin JUN , Woong Hee KIM
CPC分类号： G11C29/44 , G11C29/4401 , G11C29/72 , G11C29/80 , G11C29/838 , G11C2029/4402
摘要： A method of repairing a memory device may include collecting fail information on fail cells in a multi-block memory, classifying the fail cells into first and second types, and repairing the fail cells in the multi-block memory using one or more of a global spare memory, a local spare memory, and a common spare memory, based on the fail information.
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