公开(公告)号：US20230113584A1

公开(公告)日：2023-04-13

申请号：US17938118

申请日：2022-10-05

申请人： SKYWORKS GLOBAL PTE. LTD.

发明人： Kezia Cheng ,  Kwang Jae Shin ,  Alexandre Augusto Shirakawa ,  Stefan Bader

IPC分类号： H01L41/319 ,  H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/25 ,  H03H9/64

摘要： A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al1-x(J)xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

公开(公告)号：US20240112904A1

公开(公告)日：2024-04-04

申请号：US18370452

申请日：2023-09-20

申请人： SKYWORKS GLOBAL PTE. LTD.

发明人： Kezia Cheng ,  Kwang Jae Shin ,  Taecheol Shon ,  Yong Woo Jeon ,  Alan Sangone Chen

IPC分类号： H01L21/02 ,  H01L21/687

CPC分类号： H01L21/02274 ,  H01L21/02293 ,  H01L21/02359 ,  H01L21/68714

摘要： Disclosed are systems and methods for improving front-side process uniformity by back-side doping. In some implementations, a highly conductive doped layer can be formed on the back side of a semiconductor wafer prior to certain process steps such as plasma-based processes. Presence of such a back-side doped layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based processes. Such reduction in thickness variations can result from reduced variation in radio-frequency (RF) coupling during the plasma-based processes.