公开(公告)号：US11967593B2

公开(公告)日：2024-04-23

申请号：US17529252

申请日：2021-11-17

Applicant: SOCIONEXT INC.

Inventor： Kazuya Okubo

IPC: H01L27/02 ,  H01L23/528 ,  H01L23/60

CPC classification number: H01L27/0292 ,  H01L23/5286 ,  H01L23/60

Abstract: A semiconductor device includes a substrate; a circuit region provided with a power supply wiring, a ground wiring, and a signal line; and a first diode connected between the signal line and a first wiring. The first wiring is one of the power supply wiring and the ground wiring. The first diode includes a first impurity region of a first conductive type, electrically connected to the signal line, and a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first wiring. The signal line, the first wiring, or both is formed in the substrate.

公开(公告)号：US12199089B2

公开(公告)日：2025-01-14

申请号：US18611332

申请日：2024-03-20

Applicant: Socionext Inc.

Inventor： Kazuya Okubo

IPC: H01L27/02 ,  H01L23/528 ,  H01L23/60

Abstract: A semiconductor device includes a substrate; a circuit region provided with a power supply wiring, a ground wiring, and a signal line; and a first diode connected between the signal line and a first wiring. The first wiring is one of the power supply wiring and the ground wiring. The first diode includes a first impurity region of a first conductive type, electrically connected to the signal line, and a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first wiring. The signal line, the first wiring, or both is formed in the substrate.

公开(公告)号：US12284833B2

公开(公告)日：2025-04-22

申请号：US17529746

申请日：2021-11-18

Applicant: SOCIONEXT INC.

Inventor： Kazuya Okubo

IPC: H10D89/60 ,  H10D84/00

Abstract: A semiconductor device includes a first wiring; a first circuit region provided with a first power supply wiring and a first ground wiring; a second circuit region provided with a second power supply wiring and a second ground wiring; and a bidirectional diode connected between the first and second ground wirings, and provided with first and second diodes. The first diode includes a first impurity region of a first conductive type, connected to the second ground wiring, and a second impurity region of a second conductive type, connected to the first ground wiring. The second diode includes a third impurity region of the second conductive type connected to the second ground wiring, and a fourth impurity region of the first conductive type connected to the first ground wiring. Any of the first to fourth impurity regions, or any combination of the impurity regions is connected to the first wiring.

公开(公告)号：US20220077141A1

公开(公告)日：2022-03-10

申请号：US17529252

申请日：2021-11-17

Applicant: SOCIONEXT INC.

Inventor： Kazuya Okubo

IPC: H01L27/02 ,  H01L23/528 ,  H01L23/60

Abstract: A semiconductor device includes a substrate; a circuit region provided with a power supply wiring, a ground wiring, and a signal line; and a first diode connected between the signal line and a first wiring. The first wiring is one of the power supply wiring and the ground wiring. The first diode includes a first impurity region of a first conductive type, electrically connected to the signal line, and a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first wiring. The signal line, the first wiring, or both is formed in the substrate.