公开(公告)号：US09142539B2

公开(公告)日：2015-09-22

申请号：US14574330

申请日：2014-12-17

Applicant: SOCIONEXT INC.

Inventor： Tomoaki Ikegami ,  Kazuyuki Nakanishi ,  Masaki Tamaru

IPC: H01L23/62 ,  H01L27/02 ,  H01L27/118 ,  H01L27/06

CPC classification number: H01L27/0207 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/11898

Abstract: A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.