公开(公告)号：US20190057990A1

公开(公告)日：2019-02-21

申请号：US16169735

申请日：2018-10-24

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20190019824A1

公开(公告)日：2019-01-17

申请号：US16121418

申请日：2018-09-04

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20160020236A1

公开(公告)日：2016-01-21

申请号：US14772196

申请日：2014-03-03

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/14689

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract translation: 提供固态成像装置，制造固态成像装置的方法和电子装置。 更具体地，固态图像器件（1）包括硅衬底（22）和形成在硅衬底中的至少第一光电二极管（33）。 该器件还包括具有邻近硅衬底表面的第一表面的外延层（21）和具有从至少第一光电二极管延伸到第二表面的栅电极（41）的转移晶体管（31） 所述外延层与所述第一表面相对。 在另外的实施例中，提供了具有形成在第二半导体衬底中的多个像素的固态成像器件，其中像素相对于中心点对称。 在外延层中形成浮动扩散，并且提供通过一个传输栅极电极与浮动扩散电连接的多个传输栅电极。