公开(公告)号：US20170263665A1

公开(公告)日：2017-09-14

申请号：US15603210

申请日：2017-05-23

Applicant: SONY CORPORATION

Inventor： Naoki KOMAI ,  Naoto SASAKI ,  Naoki OGAWA ,  Takashi OINOUE ,  Hayato IWAMOTO ,  Yutaka OOKA ,  Masaya NAGATA

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/13

Abstract: A semiconductor device includes a first semiconductor substrate in which a pixel region where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate in which a logic circuit processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate protecting an on-chip lens is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin interposed therebetween.

公开(公告)号：US20190019824A1

公开(公告)日：2019-01-17

申请号：US16121418

申请日：2018-09-04

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20160020236A1

公开(公告)日：2016-01-21

申请号：US14772196

申请日：2014-03-03

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/14689

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract translation: 提供固态成像装置，制造固态成像装置的方法和电子装置。 更具体地，固态图像器件（1）包括硅衬底（22）和形成在硅衬底中的至少第一光电二极管（33）。 该器件还包括具有邻近硅衬底表面的第一表面的外延层（21）和具有从至少第一光电二极管延伸到第二表面的栅电极（41）的转移晶体管（31） 所述外延层与所述第一表面相对。 在另外的实施例中，提供了具有形成在第二半导体衬底中的多个像素的固态成像器件，其中像素相对于中心点对称。 在外延层中形成浮动扩散，并且提供通过一个传输栅极电极与浮动扩散电连接的多个传输栅电极。

公开(公告)号：US20140080312A1

公开(公告)日：2014-03-20

申请号：US13910249

申请日：2013-06-05

Applicant: Tokyo Electron Limited ,  Sony Corporation

Inventor： Hayato IWAMOTO ,  Yoshiya HAGIMOTO ,  Tomoki TETSUKA ,  Shinichiro SHIMOMURA ,  Teruomi MINAMI ,  Hiroki SAKURAI ,  Hirotaka MARUYAMA ,  Yosuke KAWABUCHI ,  Hiroshi TANAKA

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02019 ,  H01L21/02052 ,  H01L21/30608 ,  H01L21/6708

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract translation: 晶片被水平地保持并由基板保持机构旋转。 通过喷嘴将水性碱性溶液供给到晶片，并使其从晶片的中心部分流向周边边缘部分，从而蚀刻晶片。 预先将一定量的氧气等于或大于在流过晶片的碱性水溶液中所涉及的大气中的氧气的量，将其溶解在碱性水溶液中。

公开(公告)号：US20190057990A1

公开(公告)日：2019-02-21

申请号：US16169735

申请日：2018-10-24

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20160284753A1

公开(公告)日：2016-09-29

申请号：US15023466

申请日：2014-12-12

Applicant: SONY CORPORATION

Inventor： Naoki KOMAI ,  Naoto SASAKI ,  Naoki OGAWA ,  Takashi OINOUE ,  Hayato IWAMOTO ,  Yutaka OOKA ,  Masaya NAGATA

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/13

Abstract: A semiconductor device includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions (51) performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween.

Abstract translation: 一种半导体器件，其特征在于，具备：第二半导体基板（12），在所述第一半导体基板（12）上形成二维排列有进行光电转换的像素部（51）的像素区域（21） 形成从像素部分输出的像素信号，层叠第一和第二半导体衬底。 保护片上透镜（16）的保护基板（18）设置在第一半导体衬底的像素区域中的片上透镜上，其间插入有密封树脂（17）。

公开(公告)号：US20140240370A1

公开(公告)日：2014-08-28

申请号：US14176656

申请日：2014-02-10

Applicant: Sony Corporation

Inventor： Takashi SAKAIRI ,  Yoshiya HAGIMOTO ,  Hayato IWAMOTO ,  Koichiro SAGA ,  Nobutoshi FUJII

IPC: G09G3/32

CPC classification number: G09G3/3225 ,  G09G2320/0233 ,  G09G2320/046 ,  G09G2360/142 ,  G09G2360/148 ,  Y10T29/49

Abstract: A display includes: a light-emitting section provided in a display region; and a light-receiving section provided in the display region, and configured to receive light from the light-emitting section.

Abstract translation: 显示器包括：设置在显示区域中的发光部分; 以及设置在所述显示区域中并被配置为从所述发光部接收光的受光部。