SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS
    2.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS 有权
    半导体器件,其制造方法,显示器和电子设备

    公开(公告)号:US20150008427A1

    公开(公告)日:2015-01-08

    申请号:US14312126

    申请日:2014-06-23

    CPC classification number: H01L28/60 H01L27/1225 H01L27/1255

    Abstract: A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film.

    Abstract translation: 半导体器件包括:电容器,包括在下电极和上电极之间的第一绝缘膜; 以及包括第二绝缘膜和半导体膜的第一层压结构,所述第二绝缘膜和所述半导体膜位于所述下电极和所述第一绝缘膜的边缘的一部分或全部之间。

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