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    Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus
    1.
    发明授权
    Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus 有权

    公开(公告)号：US11004879B2

    公开(公告)日：2021-05-11

    申请号：US16795255

    申请日：2020-02-19

    申请人： SONY CORPORATION

    发明人： Rena Suzuki ,  Takeshi Matsunuma ,  Naoki Jyo ,  Yoshihisa Kagawa

    IPC分类号： H01L27/146 ,  H04N5/374

    摘要： The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.

    Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus
    3.
    发明授权
    Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus 有权

    公开(公告)号：US10665623B2

    公开(公告)日：2020-05-26

    申请号：US15551180

    申请日：2016-02-12

    申请人： SONY CORPORATION

    发明人： Rena Suzuki ,  Takeshi Matsunuma ,  Naoki Jyo ,  Yoshihisa Kagawa

    IPC分类号： H01L31/0232 ,  H01L27/146 ,  H04N5/374

    摘要： The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.