PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS
    1.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS 有权
    光电转换装置,固态摄像单元和电子装置

    公开(公告)号:US20150311445A1

    公开(公告)日:2015-10-29

    申请号:US14439416

    申请日:2013-10-31

    Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.

    Abstract translation: 本发明的固态图像拾取单元包括多个像素,每个像素包括光电转换元件。 光电转换元件包括光电转换层; 以及在其间设置有光电转换层的第一和第二电极,所述光电转换层包括第一导电类型的第一有机半导体和第二导电类型的第二有机半导体,并且通过添加第三有机半导体 的第一和第二有机半导体中的一种的衍生物或异构体。

    ULTRASONIC TRANSDUCER, DIAGNOSTIC ULTRASONIC PROBE, SURGICAL INSTRUMENT, SHEET-TYPE ULTRASONIC PROBE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20200253584A1

    公开(公告)日:2020-08-13

    申请号:US16637581

    申请日:2018-06-08

    Inventor: Rui MORIMOTO

    Abstract: [Object] To provide an ultrasonic transducer, a diagnostic ultrasonic probe, a surgical instrument, a sheet-type ultrasonic probe, and an electronic apparatus by which both of favorable reflection characteristics and suppression of reverberation at low cost can be achieved.[Solving Means] An ultrasonic transducer for ultrasonic imaging according to the present technology includes a piezoelectric layer, an acoustic attenuation layer, and an acoustic reflection layer. The piezoelectric layer is formed of a piezoelectric material and generates ultrasonic waves. The acoustic attenuation layer is formed of an acoustic attenuation material having an acoustic impedance lower than that of the piezoelectric material. The acoustic reflection layer is arranged on a side of the acoustic attenuation layer and which is formed of an acoustic reflection material having an acoustic impedance higher than that of the acoustic attenuation material, the side being opposite to the piezoelectric layer. The acoustic attenuation layer has a thickness which is integer multiple of ½ of a wavelength of an ultrasonic wave generated in the piezoelectric layer, the wavelength being inside the acoustic attenuation layer.

    IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS
    4.
    发明申请
    IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS 有权
    图像拾取单元和电子设备

    公开(公告)号:US20160073066A1

    公开(公告)日:2016-03-10

    申请号:US14875035

    申请日:2015-10-05

    Inventor: Rui MORIMOTO

    Abstract: There is provided an image pickup unit capable of suppressing occurrence of false color and color mixture and acquiring a color image with high image quality. The image pickup unit includes: an image sensor including a plurality of pixels and acquiring an image pickup data; a variable filter provided on a light receiving face of the image sensor, and transmitting a selective wavelength; and a filter drive section (a wavelength selection circuit and a system control section) driving the variable filter and thereby setting its transmission wavelength. By acquiring the image pickup data while time-divisionally switching the transmission wavelength of the variable filter, pixel data corresponding to the transmission wavelength of the variable filter are acquired in a temporally-successive manner.

    Abstract translation: 提供一种能够抑制伪色和混色的发生并获取高图像质量的彩色图像的图像拾取单元。 图像拾取单元包括:图像传感器,包括多个像素并获取图像拾取数据; 设置在所述图像传感器的光接收面上并透射选择波长的可变滤波器; 以及驱动可变滤波器并由此设定其传输波长的滤波器驱动部分(波长选择电路和系统控制部分)。 通过在分时地切换可变滤波器的透射波长的同时获取图像拾取数据,以时间连续的方式获取与可变滤波器的透射波长相对应的像素数据。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20130157425A1

    公开(公告)日:2013-06-20

    申请号:US13760397

    申请日:2013-02-06

    Inventor: Rui MORIMOTO

    Abstract: A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.

    Abstract translation: 半导体装置包括:冷却功能部件,包括由半导体层的表面形成的由杂质区域构成的有源区域,由包含N型杂质的半导体构成的N型栅极,形成为P型栅极的P型栅极 包括P型杂质的半导体,连接到N型栅极的第一金属布线,P型栅极和有源区,连接到P型栅极和N型栅极的第二金属布线, 以及连接到第二金属布线以将热量释放到外部的放热部分。

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