公开(公告)号：US10367026B2

公开(公告)日：2019-07-30

申请号：US16227088

申请日：2018-12-20

Applicant: SONY CORPORATION

Inventor： Ryoto Yoshita

IPC: H01L27/146 ,  H04N5/374

Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.

公开(公告)号：US20180047776A1

公开(公告)日：2018-02-15

申请号：US15725957

申请日：2017-10-05

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20190341418A1

公开(公告)日：2019-11-07

申请号：US16510445

申请日：2019-07-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US09960202B2

公开(公告)日：2018-05-01

申请号：US15370778

申请日：2016-12-06

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20170084659A1

公开(公告)日：2017-03-23

申请号：US15370778

申请日：2016-12-06

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US10163964B2

公开(公告)日：2018-12-25

申请号：US15556548

申请日：2016-03-04

Applicant: SONY CORPORATION

Inventor： Ryoto Yoshita

IPC: H01L27/146 ,  H04N5/374

Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.

公开(公告)号：US20160126273A1

公开(公告)日：2016-05-05

申请号：US14993847

申请日：2016-01-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20150084144A1

公开(公告)日：2015-03-26

申请号：US14490350

申请日：2014-09-18

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract translation: 公开了一种包括多个像素和多个片上透镜的固态成像装置。 多个像素以矩阵图案排列。 每个像素具有被配置为光电转换从半导体衬底的背面侧入射的光的光电转换部。 多个片上透镜被布置用于每隔一个像素。 片上镜头的尺寸比像素大。 存在片上透镜的像素处的每个滤色器具有截面形状，其上侧靠近片上透镜的宽度与片上透镜相同，并且其下侧靠近光电 转换部分比上侧短。

公开(公告)号：US11032499B2

公开(公告)日：2021-06-08

申请号：US16587519

申请日：2019-09-30

Applicant: SONY CORPORATION

Inventor： Yoshimichi Kumagai ,  Takashi Abe ,  Kazuyoshi Yamashita ,  Ryoto Yoshita

IPC: H04N5/361 ,  H04N5/3745 ,  H04N5/357 ,  H04N5/369 ,  H01L27/146

Abstract: A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer. The generated-charge retention gate portion applies a control voltage that is a voltage for controlling potential of the generated-charge retention portion to the generated-charge retention portion during a period of the transfer and the retained-charge transfer, applies a bias voltage that is a voltage having a polarity different from the control voltage to the generated-charge retention portion during a period different from the period of the generated-charge transfer and the retained-charge transfer.

公开(公告)号：US10818722B2

公开(公告)日：2020-10-27

申请号：US16510445

申请日：2019-07-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.