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    Imaging apparatus, imaging method, manufacturing apparatus, manufacturing method, and electronic apparatus
    3.
    发明授权
    Imaging apparatus, imaging method, manufacturing apparatus, manufacturing method, and electronic apparatus 有权
    成像装置，成像方法，制造装置，制造方法和电子装置

    公开(公告)号：US09538104B2

    公开(公告)日：2017-01-03

    申请号：US14484012

    申请日：2014-09-11

    申请人： Sony Corporation

    发明人： Yoshimichi Kumagai ,  Takashi Abe ,  Kazuyoshi Yamashita

    IPC分类号： H04N5/355 ,  H01L27/146 ,  H04N5/359 ,  H04N5/77

    CPC分类号： H04N5/3559 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14656 ,  H01L27/14689 ,  H04N5/3597 ,  H04N5/772 ,  Y10T29/41

    摘要： There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.

    摘要翻译： 提供了一种成像装置，其包括光电转换部分，保持部分以及第一和第二栅极。 光电转换部被配置为将接收的光转换为电荷。 保持部构造为保持由光电转换部提供的电荷。 第一和第二栅极设置在光电转换部分和保持部分之间，第一和第二栅极导通以将电荷从光电转换部分转移到保持部分，第二栅极在第一栅极之后被截止 关闭。

    SOLID-STATE IMAGING DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：US20160269665A1

    公开(公告)日：2016-09-15

    申请号：US15160575

    申请日：2016-05-20

    申请人： SONY CORPORATION

    发明人： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    IPC分类号： H04N5/374 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/378

    CPC分类号： H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    摘要： A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

    摘要翻译： 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元包括两个像素。 上下光电转换器和传输晶体管分别连接到上和下光电转换器，复位晶体管和放大晶体管形成两个像素。 全面信号线连接到复位晶体管和放大晶体管的各个漏极。 控制全面信号线以及传输信号线和复位信号线，以读出信号实现了像素中布线的简化，像素尺寸的缩小等。

    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权
    固态成像装置，其制造方法，相机和电子装置

    公开(公告)号：US20150041871A1

    公开(公告)日：2015-02-12

    申请号：US14492335

    申请日：2014-09-22

    申请人： Sony Corporation

    发明人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

    IPC分类号： H01L27/146

    CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

    摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

    摘要翻译： 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

    SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE
    6.
    发明申请
    SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE 审中-公开
    固态成像元件，制造方法和电子器件

    公开(公告)号：US20140312451A1

    公开(公告)日：2014-10-23

    申请号：US14322132

    申请日：2014-07-02

    申请人： Sony Corporation

    发明人： Takashi Abe

    IPC分类号： H01L27/146

    摘要： A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed.

    摘要翻译： 固体摄像元件包括具有光电转换部和侧端钉扎层的像素。 光电转换部形成在半导体基板中。 侧面钉扎层形成在光电转换部分的一侧。 通过在沟槽开放的状态下进行离子注入来形成侧端钉扎层，沟槽形成在形成有光电转换部的区域的一侧的一部分中。

    SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC APPARATUS
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC APPARATUS 审中-公开
    固态成像装置，其制造方法和电子装置

    公开(公告)号：US20140284665A1

    公开(公告)日：2014-09-25

    申请号：US14209871

    申请日：2014-03-13

    申请人： Sony Corporation

    发明人： Takashi Abe

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14603 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14689

    摘要： There is provided a solid-state imaging device including a pixel array unit in which pixels are arrayed in a two-dimensional manner, each of the pixels including a plurality of photoelectric conversion elements and a floating diffusion configured to accumulate an electric charge from the plurality of photoelectric conversion elements, wherein the floating diffusion is shared by at least two or more of the photoelectric conversion elements, and wherein one or more of the plurality of photoelectric conversion elements include a transfer gate configured to transfer an electric charge between the photoelectric conversion elements that are adjacent.

    摘要翻译： 提供了一种固态成像装置，其包括其中以二维方式排列像素的像素阵列单元，每个像素包括多个光电转换元件，以及浮动扩散部，其被配置为从多个像素阵列单元累积电荷 的光电转换元件，其中所述浮动扩散由至少两个或更多个所述光电转换元件共享，并且其中所述多个光电转换元件中的一个或多个包括被配置为在所述光电转换元件之间传送电荷的传输门 是相邻的。

    AMPLIFYING CIRCUIT AND MANUFACTURING METHOD, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
    8.
    发明申请
    AMPLIFYING CIRCUIT AND MANUFACTURING METHOD, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE 审中-公开
    放大电路和制造方法，固态成像元件和电子器件

    公开(公告)号：US20130140442A1

    公开(公告)日：2013-06-06

    申请号：US13671167

    申请日：2012-11-07

    申请人： Sony Corporation

    发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Toru Shirakata ,  Takashi Abe ,  Takafumi Morikawa

    IPC分类号： H01L31/08 ,  H05K13/00 ,  H03F3/16

    CPC分类号： H01L31/08 ,  H01L27/14614 ,  H03F3/082 ,  H03F3/16 ,  H05K13/00 ,  Y10T29/49147

    摘要： Disclosed herein is a solid-state imaging element including: a photoelectric conversion section configured to generate a charge according to received light; and a plurality of active elements configured to perform predetermined operation on the charge generated in the photoelectric conversion section, wherein a part of a gate electrode possessed by one of the active elements has a projection part buried in a substrate in which the photoelectric conversion section is formed. Thus, it is possible to suppress the occurrence of noise, and provide excellent image quality with a smaller area.

    摘要翻译： 本文公开了一种固态成像元件，包括：光电转换部，被配置为根据接收的光产生电荷; 以及多个有源元件，被配置为对所述光电转换部中产生的电荷执行预定的操作，其中，所述有源元件中的一个具有的栅电极的一部分具有掩埋在所述光电转换部为 形成。 因此，可以抑制噪声的发生，并且以较小的面积提供优异的图像质量。

    Solid-state image sensor and imaging apparatus
    9.
    发明授权
    Solid-state image sensor and imaging apparatus 有权

    公开(公告)号：US11032499B2

    公开(公告)日：2021-06-08

    申请号：US16587519

    申请日：2019-09-30

    申请人： SONY CORPORATION

    发明人： Yoshimichi Kumagai ,  Takashi Abe ,  Kazuyoshi Yamashita ,  Ryoto Yoshita

    IPC分类号： H04N5/361 ,  H04N5/3745 ,  H04N5/357 ,  H04N5/369 ,  H01L27/146

    摘要： A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer. The generated-charge retention gate portion applies a control voltage that is a voltage for controlling potential of the generated-charge retention portion to the generated-charge retention portion during a period of the transfer and the retained-charge transfer, applies a bias voltage that is a voltage having a polarity different from the control voltage to the generated-charge retention portion during a period different from the period of the generated-charge transfer and the retained-charge transfer.

    Solid state imaging device and imaging apparatus with pixel column having multiple output lines
    10.
    发明授权
    Solid state imaging device and imaging apparatus with pixel column having multiple output lines 有权

    公开(公告)号：US10658404B2

    公开(公告)日：2020-05-19

    申请号：US15124860

    申请日：2015-03-13

    申请人： SONY CORPORATION

    发明人： Takashi Abe ,  Nobutaka Shimamura

    IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H04N5/374

    摘要： The present technology relates to a solid state imaging device capable of providing a solid state imaging device that does not cause deterioration of image quality due to an increase in reading speed of a pixel signal, and an imaging apparatus. In a pixel array block in which a plurality of pixels are two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, a plurality of pixel output lines are provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels are arranged separately in a plurality of wiring layers. The present technology can be applied to, for example, a CMOS image sensor.