公开(公告)号：US20130240818A1

公开(公告)日：2013-09-19

申请号：US13846193

申请日：2013-03-18

Applicant: SONY CORPORATION

Inventor： KAZUHIRO OHBA ,  SHUICHIRO YASUDA ,  TETSUYA MIZUGUCHI ,  KATSUHISA ARATANI ,  MASAYUKI SHIMUTA ,  AKIRA KOUCHIYAMA ,  MAYUMI OGASAWARA

IPC: H01L45/00

CPC classification number: H01L45/145 ,  G11C11/16 ,  G11C11/161 ,  G11C13/0011 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633

Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

Abstract translation: 一种存储器组件，包括其间具有存储层的第一和第二电极，所述存储层具有第一和第二存储层，所述第一存储层包含铝和所述碲的硫族元素元素，所述第二存储层位于所述第一存储层和所述第一电极之间 并且含有氧化铝和具有比氧化铝更低的电阻的过渡金属氧化物和过渡金属氮氧化物中的至少一种。