公开(公告)号：US20130334489A1

公开(公告)日：2013-12-19

申请号：US13912996

申请日：2013-06-07

Applicant: Sony Corporation

Inventor： HIROAKI SEI ,  KAZUHIRO OHBA ,  TAKEYUKI SONE ,  MINORU IKARASHI

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包含可移动元件，其体积电阻率约为150mOm·cm至约12000mOmega·cm。

公开(公告)号：US20130240818A1

公开(公告)日：2013-09-19

申请号：US13846193

申请日：2013-03-18

Applicant: SONY CORPORATION

Inventor： KAZUHIRO OHBA ,  SHUICHIRO YASUDA ,  TETSUYA MIZUGUCHI ,  KATSUHISA ARATANI ,  MASAYUKI SHIMUTA ,  AKIRA KOUCHIYAMA ,  MAYUMI OGASAWARA

IPC: H01L45/00

CPC classification number: H01L45/145 ,  G11C11/16 ,  G11C11/161 ,  G11C13/0011 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633

Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

Abstract translation: 一种存储器组件，包括其间具有存储层的第一和第二电极，所述存储层具有第一和第二存储层，所述第一存储层包含铝和所述碲的硫族元素元素，所述第二存储层位于所述第一存储层和所述第一电极之间 并且含有氧化铝和具有比氧化铝更低的电阻的过渡金属氧化物和过渡金属氮氧化物中的至少一种。

公开(公告)号：US20190296083A1

公开(公告)日：2019-09-26

申请号：US16306033

申请日：2017-04-24

Applicant: SONY CORPORATION

Inventor： MINORU IKARASHI ,  SEIJI NONOGUCHI ,  TAKEYUKI SONE ,  HIROAKI SEI ,  KAZUHIRO OHBA ,  JUN OKUNO

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: [Object] To provide a circuit element, a storage device, electronic equipment, a method of writing information into a circuit element, and a method of reading information from a circuit element. [Solution] The circuit element includes: paired inert electrodes; and a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

公开(公告)号：US20180019391A1

公开(公告)日：2018-01-18

申请号：US15545923

申请日：2016-01-08

Applicant: SONY CORPORATION

Inventor： KAZUHIRO OHBA ,  MINORU IKARASHI

IPC: H01L45/00 ,  H01L27/105 ,  H01L49/02

CPC classification number: H01L45/1253 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/224 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L49/02

Abstract: A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series.

公开(公告)号：US20160079526A1

公开(公告)日：2016-03-17

申请号：US14953731

申请日：2015-11-30

Applicant: SONY CORPORATION

Inventor： HIROAKI SEI ,  KAZUHIRO OHBA ,  TAKEYUKI SONE ,  MINORU IKARASHI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1266 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层含有一个可移动元件，体积电阻率约为150mΩ〜约1.2000mΩ（OHgr·cm）。