公开(公告)号：US20200286937A1

公开(公告)日：2020-09-10

申请号：US16877304

申请日：2020-05-18

Applicant: SONY CORPORATION

Inventor： Hideyuki HONDA ,  Tetsuya UCHIDA ,  Toshifumi WAKANO ,  Yusuke TANAKA ,  Yoshiharu KUDOH ,  Hirotoshi NOMURA ,  Tomoyuki HIRANO ,  Shinichi YOSHIDA ,  Yoichi UEDA ,  Kosuke NAKANISHI

IPC: H01L27/146 ,  H01L21/76 ,  H04N5/365 ,  H04N5/378

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus.The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

公开(公告)号：US20140226051A1

公开(公告)日：2014-08-14

申请号：US14253576

申请日：2014-04-15

Applicant: Sony Corporation

Inventor： Maki SATO ,  Yoshiharu KUDOH

IPC: H04N5/359 ,  H04N5/217 ,  H04N5/235 ,  H04N5/351

CPC classification number: H04N5/2175 ,  H01L27/14654 ,  H04N3/1568 ,  H04N5/2351 ,  H04N5/351 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/374

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.

Abstract translation: 提供固态成像装置。 固态成像装置包括具有布置在半导体衬底上的多个像素的成像区域，其中每个像素包括光电转换部分和用于将由光电转换产生的电荷转换成像素信号的电荷转换部分，以及 通过控制半导体衬底的衬底电压来抑制起霜。

公开(公告)号：US20200161349A1

公开(公告)日：2020-05-21

申请号：US16749845

申请日：2020-01-22

Applicant: SONY CORPORATION

Inventor： Yoshiharu KUDOH

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H01L29/78 ,  H01L29/423

Abstract: The present disclosure relates to a solid-state imaging element, a sensor apparatus, and an electronic device capable of achieving better characteristics. A transistor constituting a pixel includes: a gate electrode having at least two fin portions formed so as to be buried from a planar portion planarly formed on a surface of a semiconductor substrate toward an inside of the semiconductor substrate; and a channel portion provided across a source and a drain so as to be in contact with side surfaces of the fin portions via an insulating film. In addition, a width of the channel portion is formed to be narrower than a depth of the fin portion. The present technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US20190043901A1

公开(公告)日：2019-02-07

申请号：US15737402

申请日：2017-04-11

Applicant: SONY CORPORATION

Inventor： Hideyuki HONDA ,  Tetsuya UCHIDA ,  Toshifumi WAKANO ,  Yusuke TANAKA ,  Yoshiharu KUDOH ,  Hirotoshi NOMURA ,  Tomoyuki HIRANO ,  Shinichi YOSHIDA ,  Yoichi UEDA ,  Kosuke NAKANISHI

IPC: H01L27/146 ,  H04N5/365 ,  H04N5/378

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

公开(公告)号：US20190123079A1

公开(公告)日：2019-04-25

申请号：US16086697

申请日：2017-03-17

Applicant: SONY CORPORATION

Inventor： Yoshiharu KUDOH

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to a solid-state imaging element, a sensor apparatus, and an electronic device capable of achieving better characteristics. A transistor constituting a pixel includes: a gate electrode having at least two fin portions formed so as to be buried from a planar portion planarly formed on a surface of a semiconductor substrate toward an inside of the semiconductor substrate; and a channel portion provided across a source and a drain so as to be in contact with side surfaces of the fin portions via an insulating film. In addition, a width of the channel portion is formed to be narrower than a depth of the fin portion. The present technology is applicable to a CMOS image sensor, for example.