公开(公告)号：US20240365574A1

公开(公告)日：2024-10-31

申请号：US18290934

申请日：2022-03-16

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： YOSUKE SAITO ,  MASATO KANNO ,  SHINNOSUKE HATTORI ,  HAJIME KOBAYASHI ,  TAKEO TSUKAMOTO ,  YUSHIRO NAKAGOME ,  CHIAKI TAKAHASHI ,  MIKA INABA ,  YOSUKE SUDA ,  KEI FUKUHARA ,  HIDEAKI MOGI

IPC分类号： H10K39/00 ,  H01L25/16 ,  H01L27/146 ,  H10K30/30 ,  H10K39/32

CPC分类号： H10K39/601 ,  H01L25/167 ,  H01L27/14645 ,  H10K30/30 ,  H10K39/32

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic layer provided between the first electrode and the second electrode and at least including a photoelectric conversion layer; and a first semiconductor layer provided between the second electrode and the organic layer and having an electron affinity of 4.5 eV or more and 6.0 eV or less, the first semiconductor layer including a first carbon-containing compound and a second carbon-containing compound, the first carbon-containing compound having an electron affinity greater than 4.8 eV or an electron affinity greater than a work function of the second electrode, the second carbon-containing compound having an ionization potential greater than 5.5 eV.

公开(公告)号：US20240260284A1

公开(公告)日：2024-08-01

申请号：US18559178

申请日：2022-02-22

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： YOSUKE SAITO ,  YUSHIRO NAKAGOME ,  MASATO KANNO

IPC分类号： H10K39/32 ,  H10K30/86 ,  H10K85/20 ,  H10K101/30 ,  H10K102/00

CPC分类号： H10K39/32 ,  H10K30/86 ,  H10K85/211 ,  H10K2101/30 ,  H10K2102/351

摘要： A photoelectric conversion device according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode disposed to face the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode, the photoelectric conversion layer (13) including fullerenes or fullerene derivatives; a first electric charge block layer (12A) provided between the first electrode (11) and the photoelectric conversion layer (13), the first electric charge block layer (12A) including an organic material having an HOMO level that is deeper by 1 eV or higher and an LUMO level ranging from 3.7 eV to 4.8 eV inclusive, with respect to a work function of the first electrode (11); and a second electric charge block layer (12B) provided between the first electric charge block layer (12A) and the photoelectric conversion layer (13), the second electric charge block layer (12B) including the fullerenes or the fullerene derivatives.

公开(公告)号：US20220181568A1

公开(公告)日：2022-06-09

申请号：US17599123

申请日：2020-03-13

申请人： Sony Group Corporation

发明人： YOSUKE SAITO ,  MASATO KANNO

IPC分类号： H01L51/42 ,  H01L51/00

摘要： The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element.
A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.