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公开(公告)号：US20240164122A1
公开(公告)日：2024-05-16
申请号：US18452823
申请日：2023-08-21
发明人： SHINTAROU HIRATA , MASAHIRO JOEI , KENICHI MURATA , MASASHI BANDO , YOSUKE SAITO , RYOSUKE SUZUKI
摘要： To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element including at least a first electrode, a work function control layer, a photoelectric conversion layer, an oxide semiconductor layer, and a second electrode in this order, and further including a third electrode, in which the third electrode is provided apart from the second electrode and is provided facing the photoelectric conversion layer via an insulating layer, and the work function control layer contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.
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公开(公告)号：US20240260284A1
公开(公告)日：2024-08-01
申请号：US18559178
申请日：2022-02-22
发明人： YOSUKE SAITO , YUSHIRO NAKAGOME , MASATO KANNO
IPC分类号： H10K39/32 , H10K30/86 , H10K85/20 , H10K101/30 , H10K102/00
CPC分类号： H10K39/32 , H10K30/86 , H10K85/211 , H10K2101/30 , H10K2102/351
摘要： A photoelectric conversion device according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode disposed to face the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode, the photoelectric conversion layer (13) including fullerenes or fullerene derivatives; a first electric charge block layer (12A) provided between the first electrode (11) and the photoelectric conversion layer (13), the first electric charge block layer (12A) including an organic material having an HOMO level that is deeper by 1 eV or higher and an LUMO level ranging from 3.7 eV to 4.8 eV inclusive, with respect to a work function of the first electrode (11); and a second electric charge block layer (12B) provided between the first electric charge block layer (12A) and the photoelectric conversion layer (13), the second electric charge block layer (12B) including the fullerenes or the fullerene derivatives.
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公开(公告)号：US20240365574A1
公开(公告)日：2024-10-31
申请号：US18290934
申请日：2022-03-16
发明人： YOSUKE SAITO , MASATO KANNO , SHINNOSUKE HATTORI , HAJIME KOBAYASHI , TAKEO TSUKAMOTO , YUSHIRO NAKAGOME , CHIAKI TAKAHASHI , MIKA INABA , YOSUKE SUDA , KEI FUKUHARA , HIDEAKI MOGI
IPC分类号： H10K39/00 , H01L25/16 , H01L27/146 , H10K30/30 , H10K39/32
CPC分类号： H10K39/601 , H01L25/167 , H01L27/14645 , H10K30/30 , H10K39/32
摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic layer provided between the first electrode and the second electrode and at least including a photoelectric conversion layer; and a first semiconductor layer provided between the second electrode and the organic layer and having an electron affinity of 4.5 eV or more and 6.0 eV or less, the first semiconductor layer including a first carbon-containing compound and a second carbon-containing compound, the first carbon-containing compound having an electron affinity greater than 4.8 eV or an electron affinity greater than a work function of the second electrode, the second carbon-containing compound having an ionization potential greater than 5.5 eV.
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公开(公告)号：US20180233540A1
公开(公告)日：2018-08-16
申请号：US15751029
申请日：2016-08-09
发明人： YOSUKE SAITO , YOSHIAKI OBANA , NOBUYUKI MATSUZAWA
CPC分类号： H01L27/307 , H01L27/1461 , H01L27/14647 , H01L27/14665 , H01L27/286 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0047 , H01L51/0058 , H01L51/006 , H01L51/0068 , H01L51/0072 , H01L51/008 , H01L51/4253 , H01L51/442 , H04N5/369 , Y02E10/549
摘要： A photoelectric conversion element according to one embodiment of the disclosure includes: a first electrode and a second electrode that are oppositely disposed; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cm−1 or less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region.
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公开(公告)号：US20210083009A1
公开(公告)日：2021-03-18
申请号：US16963725
申请日：2019-01-18
发明人： OSAMU ENOKI , YUTA HASEGAWA , YUKI NEGISHI , IWAO YAGI , YASUHARU UJIIE , YOSUKE SAITO
摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including an organic semiconductor material represented by the following general formula (1), in which the organic semiconductor material includes, in at least one of R2 or R6, a substituent represented by the following general formula (2).
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公开(公告)号：US20210082989A1
公开(公告)日：2021-03-18
申请号：US17102123
申请日：2020-11-23
发明人： YOSUKE SAITO , YOSHIAKI OBANA , NOBUYUKI MATSUZAWA
摘要： A photoelectric conversion element includes a first electrode and a second electrode that are oppositely disposed and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cm−1 or less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region.
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公开(公告)号：US20210265582A1
公开(公告)日：2021-08-26
申请号：US17250425
申请日：2019-07-30
发明人： SHINTAROU HIRATA , MASAHIRO JOEI , KENICHI MURATA , MASASHI BANDO , YOSUKE SAITO , RYOSUKE SUZUKI
摘要： To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.
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公开(公告)号：US20220181568A1
公开(公告)日：2022-06-09
申请号：US17599123
申请日：2020-03-13
发明人： YOSUKE SAITO , MASATO KANNO
摘要： The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element.
A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.-
公开(公告)号：US20230276641A1
公开(公告)日：2023-08-31
申请号：US18006569
申请日：2021-07-16
发明人： AYUMI KAI , YOSUKE SAITO
CPC分类号： H10K39/32 , H10K85/211 , H10K39/38 , H10K39/601 , H10K30/211 , H10K30/85 , H10K30/86 , H10K2101/30
摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.
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公开(公告)号：US20230245886A1
公开(公告)日：2023-08-03
申请号：US18004278
申请日：2021-06-14
IPC分类号： H01L21/02 , H01L27/146
CPC分类号： H01L21/02601 , H01L27/146 , B82Y30/00
摘要： An imaging device including a photoelectric conversion layer including a semiconductor nanoparticle (100) including a particle body (101) and a monoatomic ligand (102). The particle body (101) includes a semiconductor core (103) including at least two or more elements selected from a Group I element, a Group III element, a Group V element, and a Group VI element. The monoatomic ligand (102) is bonded to a surface of the particle body (101).
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