公开(公告)号：US20230180628A1

公开(公告)日：2023-06-08

申请号：US17999746

申请日：2021-04-20

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： EIJI KARIYADA ,  YO SATO

IPC: H10N50/85 ,  H10N50/10 ,  H10B61/00

CPC classification number: H10N50/85 ,  H10N50/10 ,  H10B61/20

Abstract: Provided is a magnetoresistive effect element having a relatively high magnetoresistance ratio (MR ratio) while reducing element resistance (RA). The magnetoresistive element includes: a first oxide insulating layer provided on one surface side of a magnetization fixed layer; a magnetization free layer provided on the opposite side of the first oxide insulating layer from the magnetization fixed layer side and having perpendicular magnetic anisotropy; a second oxide insulating layer provided on the opposite side of the magnetization free layer from the first oxide insulating layer side; and a metal cap layer provided on the opposite side of the second oxide insulating layer from the magnetization free layer side. The thickness of the second oxide insulating layer is larger than the thickness of the first oxide insulating layer.

公开(公告)号：US20240415025A1

公开(公告)日：2024-12-12

申请号：US18699351

申请日：2022-10-06

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： YUITO KAGEYAMA ,  YO SATO ,  EIJI KARIYADA ,  MASAKI ENDO ,  MASANORI HOSOMI

IPC: H10N50/10 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A storage element according to an embodiment includes: a fixed layer that has a fixed magnetization direction; an insulation layer that is disposed on the fixed layer; a storage layer that is disposed on the insulation layer and changes a magnetization direction according to an applied current; and a cap layer that is disposed on the storage layer and made of an oxide, and the cap layer includes a plurality of conductive regions having higher conductivity than conductivity of the oxide.

公开(公告)号：US20240292759A1

公开(公告)日：2024-08-29

申请号：US18573674

申请日：2022-03-02

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： YO SATO ,  EIJI KARIYADA ,  HIRONOBU TANIGAWA ,  HIROKI TANABE ,  HIROYUKI UCHIDA ,  MASAKI ENDO ,  YUITO KAGEYAMA

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic memory element (10) includes a reference layer (11) of which a magnetization direction is fixed, a tunnel barrier layer (12) provided on the reference layer (11), a magnetic storage layer (13) that is provided on the tunnel barrier layer (12) and of which a magnetization direction is changeable, a high Hk application layer (14) that is provided on the magnetic storage layer (13) and improves magnetic anisotropy of the magnetic storage layer (13), and a Cap layer (15) provided on the high Hk application layer (14), and a material of the high Hk application layer (14) is different from a material of the Cap layer (15), and the material of the high Hk application layer (14) is a high melting point metal.