公开(公告)号：US20240292759A1

公开(公告)日：2024-08-29

申请号：US18573674

申请日：2022-03-02

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： YO SATO ,  EIJI KARIYADA ,  HIRONOBU TANIGAWA ,  HIROKI TANABE ,  HIROYUKI UCHIDA ,  MASAKI ENDO ,  YUITO KAGEYAMA

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic memory element (10) includes a reference layer (11) of which a magnetization direction is fixed, a tunnel barrier layer (12) provided on the reference layer (11), a magnetic storage layer (13) that is provided on the tunnel barrier layer (12) and of which a magnetization direction is changeable, a high Hk application layer (14) that is provided on the magnetic storage layer (13) and improves magnetic anisotropy of the magnetic storage layer (13), and a Cap layer (15) provided on the high Hk application layer (14), and a material of the high Hk application layer (14) is different from a material of the Cap layer (15), and the material of the high Hk application layer (14) is a high melting point metal.