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5 条记录 (耗时 0.014 秒)

    Light reception device and distance measurement module
    3.
    发明授权
    Light reception device and distance measurement module 有权

    公开(公告)号：US11362126B2

    公开(公告)日：2022-06-14

    申请号：US16638928

    申请日：2019-07-04

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Tomoharu Ogita

    IPC分类号： H01L27/146 ,  G01S17/08

    摘要： The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion, a second charge detection portion, and a through electrode extending through the semiconductor layer. The light reception device is configured such that a third voltage is applied through the through electrode to a film formed on a face of the semiconductor layer on the on-chip lens side. The present technology can be applied to a light reception device that generates distance information, for example, by a ToF method or the like.

    Imaging device, camera module, and electronic apparatus to enhance sensitivity to light
    4.
    发明授权
    Imaging device, camera module, and electronic apparatus to enhance sensitivity to light 有权

    公开(公告)号：US11362123B2

    公开(公告)日：2022-06-14

    申请号：US16638520

    申请日：2018-08-08

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Tomoharu Ogita

    IPC分类号： H01L27/146 ,  H04N5/369 ,  G02B7/04

    摘要： The present technology relates to an imaging device, a camera module, and an electronic apparatus that make it possible to reduce a profile of the camera module and to enhance sensitivity. The imaging device includes: a semiconductor substrate in which a light receiving section is formed that includes a plurality of pixels performing photoelectric conversion; and a reinforcing member that is disposed on side of the light receiving section of the semiconductor substrate and includes an opening in which a part opposed to the light receiving section is opened. The present technology is applicable to, for example, an imaging device that captures an image, a camera module that focuses light to capture an image, an electronic apparatus equipped with a camera function, a vehicle control system that is mounted on a vehicle, an endoscopic surgery system that is used in an endoscopic surgery, and the like.

    Solid-state imaging element, electronic apparatus, and semiconductor device
    5.
    发明授权
    Solid-state imaging element, electronic apparatus, and semiconductor device 有权

    公开(公告)号：US11024663B2

    公开(公告)日：2021-06-01

    申请号：US16496752

    申请日：2018-03-16

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Hidenobu Tsugawa ,  Tomoharu Ogita

    IPC分类号： H01L27/146 ,  A61B1/05 ,  H04N5/369 ,  B60R11/04 ,  B60R16/023 ,  G05D1/02

    摘要： The present technology relates a solid-state imaging element, an electronic apparatus, and a semiconductor device each of which enables deterioration of electrical characteristics in a well region of a semiconductor element formed in a thinned semiconductor substrate to be restrained. A solid-state imaging element as a first aspect of the present technology is a solid-state imaging element constituted by laminating semiconductor substrates in three or more layers, in which of the laminated semiconductor substrates, at least one sheet of the semiconductor substrate is thinned, and an impurity region whose carrier type is the same as that of the thinned semiconductor substrate is formed between a well region and a thinned surface portion in the thinned semiconductor substrate. The present technology can, for example, be applied to a CMOS image sensor.