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公开(公告)号:US20240357841A1
公开(公告)日:2024-10-24
申请号:US18683908
申请日:2022-08-20
CPC分类号: H10K30/50 , H10K30/81 , H10K30/85 , H10K30/86 , H10K71/135 , H10K85/621 , H10K2102/20
摘要: Multilayer organic electronic devices having an electron transport layer (ETL). The ETL is a film comprising an N-annulated perylene diimide (NPDI) compound having at least one pyrrole N—H bond and at least 1 equivalent of Cs2CO3 with respect to the NPDI compound and the number of pyrrolic N—H bonds in the NPDI compound. The ETL is positioned between the photoactive layer and the top electrode (cathode). Multilayer devices including the ETL are fabricated employing immiscible solvent methods. A method for making the ETL layers is provided which employs an ink formulation in which the NPDI compound is solubilized in a selected polar solvent by addition of at least one equivalent of Cs2CO3 respect to the NPDI compound. Exemplary polar solvents include ethanol, 1-propanol, ethyl acetate and mixtures thereof.
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公开(公告)号:US20240260284A1
公开(公告)日:2024-08-01
申请号:US18559178
申请日:2022-02-22
发明人: YOSUKE SAITO , YUSHIRO NAKAGOME , MASATO KANNO
IPC分类号: H10K39/32 , H10K30/86 , H10K85/20 , H10K101/30 , H10K102/00
CPC分类号: H10K39/32 , H10K30/86 , H10K85/211 , H10K2101/30 , H10K2102/351
摘要: A photoelectric conversion device according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode disposed to face the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode, the photoelectric conversion layer (13) including fullerenes or fullerene derivatives; a first electric charge block layer (12A) provided between the first electrode (11) and the photoelectric conversion layer (13), the first electric charge block layer (12A) including an organic material having an HOMO level that is deeper by 1 eV or higher and an LUMO level ranging from 3.7 eV to 4.8 eV inclusive, with respect to a work function of the first electrode (11); and a second electric charge block layer (12B) provided between the first electric charge block layer (12A) and the photoelectric conversion layer (13), the second electric charge block layer (12B) including the fullerenes or the fullerene derivatives.
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3.
公开(公告)号:US20240224551A1
公开(公告)日:2024-07-04
申请号:US18429475
申请日:2024-02-01
发明人: Bao Tu , Changsong Chen , Yongsheng Guo , Guodong Chen
IPC分类号: H10K30/82 , H10K30/40 , H10K30/86 , H10K85/60 , H10K102/00
CPC分类号: H10K30/82 , H10K30/40 , H10K30/86 , H10K85/631 , H10K2102/00
摘要: Provided are a perovskite battery, a method for preparing same, and a photovoltaic module containing same. The perovskite battery includes: a first electrode; a second electrode; a perovskite layer, located between the first electrode and the second electrode; an organic hole transport layer, located between the first electrode and the perovskite layer; and an inorganic hole transport layer, located between the organic hole transport layer and the perovskite layer. A thickness H1 of the inorganic hole transport layer and a thickness H2 of the organic hole transport layer satisfy H1/H2≤0.4. The inorganic hole transport layer includes an inorganic hole transport material. The inorganic hole transport material is selected from inorganic P-type semiconductor materials that are soluble in N,N-dimethylformamide under a room temperature at a solubility lower than 0.10 mg/mL.
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4.
公开(公告)号:US11968886B2
公开(公告)日:2024-04-23
申请号:US18469581
申请日:2023-09-19
发明人: Ligang Xu , Wenbo Jia , Dongdong Yan
摘要: A preparation method of perovskite film based on semicarbazide hydrochloride (SEM-HCl) additive and a preparation method of photovoltaic device are provided, a perovskite optimized crystallization strategy is provided, a tin-based perovskite thin film is prepared based on a solution method, and a purpose of regulating and controlling perovskite crystallization is achieved by means of a cross-linking effect of special groups in SEM-HCl and perovskite components. Defects of crystals of the prepared perovskite film are reduced, the non-radiative recombination in a transmission process of carriers is suppressed, and a photoelectric conversion efficiency and a photovoltaic device stability are remarkably improved.
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公开(公告)号:US11849596B2
公开(公告)日:2023-12-19
申请号:US18355095
申请日:2023-07-19
发明人: Bao Tu , Weifeng Liang , Limei Zhou , Yongsheng Guo , Guodong Chen , Chuying Ouyang
摘要: A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.
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公开(公告)号:US20230363187A1
公开(公告)日:2023-11-09
申请号:US18355095
申请日:2023-07-19
发明人: Bao TU , Weifeng LIANG , Limei ZHOU , Yongsheng GUO , Guodong CHEN , Chuying OUYANG
摘要: A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.
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公开(公告)号:US20230232642A1
公开(公告)日:2023-07-20
申请号:US18010463
申请日:2021-06-29
申请人: Takaya ITO , Ryota ARAI , Tomoya HIRANO
发明人: Takaya ITO , Ryota ARAI , Tomoya HIRANO
摘要: A photoelectric conversion element includes a base, a first electrode on or above the base, an electron-transporting layer on or above the first electrode, a photoelectric conversion layer on or above the electron-transporting layer, a hole-transporting layer on or above the photoelectric conversion layer, and a second electrode on or above the hole-transporting layer. The photoelectric conversion element has a penetration portion penetrating the electron-transporting layer and the photoelectric conversion layer. The photoelectric conversion element includes, in the penetration portion, a material of the hole-transporting layer and a material of the second electrode.
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8.
公开(公告)号:US20230209846A1
公开(公告)日:2023-06-29
申请号:US18089844
申请日:2022-12-28
发明人: Hyuk KIM
CPC分类号: H10K30/85 , H10K30/82 , H10K30/86 , H10K30/50 , H10K71/15 , H10K85/215 , H10K85/113 , H10K2102/103
摘要: Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC71BM/MoO3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.
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公开(公告)号:US20240324256A1
公开(公告)日:2024-09-26
申请号:US18609919
申请日:2024-03-19
发明人: WEI-CHAO CHEN , LIANG-YU CHEN , HONG-ZHENG LAI , TSENG-LUNG CHANG
IPC分类号: H10K30/86 , H10K30/40 , H10K101/30
CPC分类号: H10K30/86 , H10K30/40 , H10K2101/30
摘要: A method for preparing a hole transport layer of a perovskite solar cell, comprises S11, providing a conductive substrate; and S12: doping silver, gallium, selenium and sulfur with each other on the conductive substrate to obtain a hole transport layer. The present disclosure further provides a hole transport layer of a perovskite solar cell and a perovskite solar cell.
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公开(公告)号:US20240268134A1
公开(公告)日:2024-08-08
申请号:US18413993
申请日:2024-01-16
发明人: TOMONA YAMAGUCHI
CPC分类号: H10K39/32 , H10K30/35 , H10K85/615 , H10K85/631 , H10K30/85 , H10K30/86
摘要: The present disclosure discloses a photoelectric conversion element in which dark current is reduced, wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode and including quantum dots, which include nanoparticles and a protective ligand, wherein the nanoparticles contain at least two elements selected from the group consisting of group 11 elements, group 12 elements, group 13 elements, group 14 elements, group 15 elements, and group 16 elements, and the protective ligand includes a cationic ligand and an anionic ligand, and the cationic ligand and the anionic ligand both have a molecular weight of 250 or less.
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