PHOTOELECTRIC CONVERSION DEVICE AND IMAGING MACHINE

    公开(公告)号:US20240260284A1

    公开(公告)日:2024-08-01

    申请号:US18559178

    申请日:2022-02-22

    摘要: A photoelectric conversion device according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode disposed to face the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode, the photoelectric conversion layer (13) including fullerenes or fullerene derivatives; a first electric charge block layer (12A) provided between the first electrode (11) and the photoelectric conversion layer (13), the first electric charge block layer (12A) including an organic material having an HOMO level that is deeper by 1 eV or higher and an LUMO level ranging from 3.7 eV to 4.8 eV inclusive, with respect to a work function of the first electrode (11); and a second electric charge block layer (12B) provided between the first electric charge block layer (12A) and the photoelectric conversion layer (13), the second electric charge block layer (12B) including the fullerenes or the fullerene derivatives.

    HIGHLY EFFICIENT INVERTED POLYMER SOLAR CELLS USING AN INDIUM GALLIUM ZINC OXIDE INTERFACIAL LAYER

    公开(公告)号:US20230209846A1

    公开(公告)日:2023-06-29

    申请号:US18089844

    申请日:2022-12-28

    发明人: Hyuk KIM

    摘要: Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC71BM/MoO3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

    PHOTOELECTRIC CONVERSION ELEMENT
    10.
    发明公开

    公开(公告)号:US20240268134A1

    公开(公告)日:2024-08-08

    申请号:US18413993

    申请日:2024-01-16

    发明人: TOMONA YAMAGUCHI

    摘要: The present disclosure discloses a photoelectric conversion element in which dark current is reduced, wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode and including quantum dots, which include nanoparticles and a protective ligand, wherein the nanoparticles contain at least two elements selected from the group consisting of group 11 elements, group 12 elements, group 13 elements, group 14 elements, group 15 elements, and group 16 elements, and the protective ligand includes a cationic ligand and an anionic ligand, and the cationic ligand and the anionic ligand both have a molecular weight of 250 or less.