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    Variable capacitor used in integrated circuit of differential structure
    1.
    发明授权
    Variable capacitor used in integrated circuit of differential structure 有权

    公开(公告)号：US09685908B1

    公开(公告)日：2017-06-20

    申请号：US15207470

    申请日：2016-07-11

    Applicant: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK

    Inventor： Mi Lim Lee ,  Ga Yeon Ko ,  Chang Kun Park

    IPC: H03B5/12

    CPC classification number: H03B5/124 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/1243 ,  H03B5/1253

    Abstract: The present invention related to a varactor used in an integrated circuit of a differential structure. An exemplary embodiment of the present invention provides a variable capacitor connected between first and second signal lines which are differential signal lines included in an integrated circuit of a differential structure, including: a plurality of N-type semiconductors separately arranged; one or more P-type semiconductors disposed between the N-type semiconductors to make first and second PN junctions with N-type semiconductors contacting upper and lower portions thereof and to receive a control voltage, wherein, among the N-type semiconductors, first N-type semiconductors corresponding to (2n−1)-th (n being a positive integer) are connected with the first signal line, and second N-type semiconductors corresponding to 2n-th are connected with the second signal line, and parasitic capacitances of the first and second PN junctions are varied by adjusting the control voltage.

    Oscillator with differential structure
    2.
    发明授权
    Oscillator with differential structure 有权
    具差分结构的振荡器

    公开(公告)号：US09374035B2

    公开(公告)日：2016-06-21

    申请号：US14571227

    申请日：2014-12-15

    Applicant: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK

    Inventor： Mi Lim Lee ,  Chang Kun Park

    IPC: H03B5/12 ,  H03B5/08 ,  H01L29/66 ,  H01L27/08

    CPC classification number: H03B5/1212

    Abstract: An oscillator with a differential structure which is formed in an integrated circuit, including: a first transistor and a second transistor in each of which a drain electrode, a gate electrode, and a source electrode are sequentially arranged, a drain of the first transistor is connected with a gate of the second transistor through a first wiring, a drain of the second transistor is connected with a gate of the first transistor through a second wiring, and a first end of a source of the first transistor and a first end of a source of the second transistor are connected through a third wiring, and a second end of the source of the first transistor and a second end of the source of the second transistor are connected through a fourth wiring.

    Abstract translation: 一种形成在集成电路中的差分结构的振荡器，包括：第一晶体管和第二晶体管，其中依次排列有漏电极，栅电极和源电极，第一晶体管的漏极为 通过第一布线与第二晶体管的栅极连接，第二晶体管的漏极通过第二布线与第一晶体管的栅极连接，第一晶体管的源极的第一端和第一晶体管的第一端 第二晶体管的源极通过第三布线连接，第一晶体管的源极的第二端和第二晶体管的源极的第二端通过第四布线连接。

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