公开(公告)号：US20240266430A1

公开(公告)日：2024-08-08

申请号：US18577714

申请日：2022-12-29

Applicant: SOUTHEAST UNIVERSITY

Inventor： Long ZHANG ,  Weifeng SUN ,  Siyang LIU ,  Jie MA ,  Peigang LIU ,  Longxing SHI

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/207

CPC classification number: H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207

Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.