公开(公告)号：US20250056834A1

公开(公告)日：2025-02-13

申请号：US18722930

申请日：2022-11-30

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO LTD.

Inventor： Long ZHANG ,  Nailong HE ,  Yongjiu CUI ,  Sen ZHANG ,  Xiaona WANG ,  Feng LIN ,  Jie MA ,  Siyang LIU ,  Weifeng SUN

IPC: H01L29/78 ,  H01L21/266 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

Abstract: A manufacturing method for a P-type laterally diffused metal oxide semiconductor device includes: forming a N-type buried layer in a substrate, forming a P-type region located on the N-type buried layer, and forming a mask layer located on the P-type region; patterning the mask layer to form at least two injection windows; performing N-type ion implantation by the at least two injection windows; forming an oxide layer; removing the mask layer; performing P-type ion implantation on the P-type region to form a P-type doped region; diffusing the P-type doped region to form a drift region and two P-type well regions, diffusing the high-voltage N-well doped region to form a high-voltage N-type well region, and diffusing the low-voltage N-well doped region to form a low-voltage N-type well region; and forming a source doped region, a drain doped region, and a gate.

公开(公告)号：US20250005699A1

公开(公告)日：2025-01-02

申请号：US18705549

申请日：2023-01-06

Applicant: SOUTHEAST UNIVERSITY

Inventor： Jie MA ,  Qianlian Wang ,  Jingxu Chen

IPC: G06Q50/47 ,  G06Q10/047

Abstract: Provided in the present invention is a passenger-vehicle matching method for an online ride sharing. In the present invention, firstly, matching is performed on passengers by using an integer linear programming algorithm, so as to form a passenger combination scheme involving the optimal total travel time of the passengers; and secondly, in the present invention, virtual passenger combinations or virtual vehicles are supplemented, such that the number of passenger combinations is the same as the number of vehicles, and the passenger combinations are matched with the vehicles by using the integer linear programming algorithm again, so as to obtain a passenger-vehicle matching scheme involving the optimal total travel time. The present invention optimizes the passenger-vehicle matching process in online ride-hailing shared travel, enhancing user experience and efficiency, while also promoting a green traffic mode that significantly reduces urban traffic pressure and pollution.

公开(公告)号：US20240266430A1

公开(公告)日：2024-08-08

申请号：US18577714

申请日：2022-12-29

Applicant: SOUTHEAST UNIVERSITY

Inventor： Long ZHANG ,  Weifeng SUN ,  Siyang LIU ,  Jie MA ,  Peigang LIU ,  Longxing SHI

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/207

CPC classification number: H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207

Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.

公开(公告)号：US20220376094A1

公开(公告)日：2022-11-24

申请号：US17762212

申请日：2020-08-26

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Long ZHANG ,  Jie MA ,  Yan GU ,  Sen ZHANG ,  Jing ZHU ,  Jinli GONG ,  Weifeng SUN ,  Longxing SHI

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.