公开(公告)号：US12051742B1

公开(公告)日：2024-07-30

申请号：US18577714

申请日：2022-12-29

申请人： SOUTHEAST UNIVERSITY

发明人： Long Zhang ,  Weifeng Sun ,  Siyang Liu ,  Jie Ma ,  Peigang Liu ,  Longxing Shi

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.