公开(公告)号：US11152936B2

公开(公告)日：2021-10-19

申请号：US17044623

申请日：2020-04-15

Applicant: SOUTHEAST UNIVERSITY

Inventor： Jing Zhu ,  Weifeng Sun ,  Bowei Yang ,  Siyuan Yu ,  Yangyang Lu ,  Longxing Shi

IPC: H03K3/00 ,  H03K17/08 ,  H03K17/16 ,  H03K17/687 ,  H03K19/20

Abstract: The present invention discloses a gate drive circuit for reducing a reverse recovery current of a power device, and belongs to the field of basic electronic circuit technologies. The gate drive circuit includes a high-voltage LDMOS transistor, a diode forming a freewheeling path when the diode is turned on or a low-voltage MOS transistor in anti-parallel connection with a body diode, and a voltage detection circuit. When the power device is turned off, a freewheeling current produced by an inductive load flows through a freewheeling diode, the voltage detection circuit detects that the freewheeling diode is turned on, and an output signal is processed by a control circuit, to cause the drive circuit to output a high level, so that channels of the power device and the high-voltage LDMOS transistor are turned on, the freewheeling current flows through the conductive channels, almost not through the freewheeling diode, and there is no reverse recovery current in the freewheeling diode at this time, thereby reducing the reverse recovery current of the power device.