LARGE-SCALE MUTL-STEP SYNTHESIS METHOD FOR ULTRALONG SILVER NANOWIRE WITH CONTRALLABLE DIAMETER

    公开(公告)号:US20190168309A1

    公开(公告)日:2019-06-06

    申请号:US15735129

    申请日:2017-03-03

    Abstract: A large-scale multi-step synthesis method for ultralong silver nanowire with controllable diameter, comprises: an ethylene glycol solution containing polyvinylpyrrolidone and sodium chloride is fully heated to obtain a solution with strong reducibility, and then silver nitrate in glycol solution is added for a generation of a large number of crystal seeds; hydrogen peroxide is used to achieve the selection of the crystal seeds for a small amount of crystal seeds with particular sizes; the temperature is immediately raised to increase the reaction rate until the threshold of the etching crystal seeds of nitric acid is broke through; the temperature is lowered for long-timed reaction to slow down the reaction rate, reduce the probability of the isotropic seeds by self-nucleation and promote the absorption of small nucleus in the radial direction of large nucleus or nanowire, thus obtaining the ultralong silver nanowire.

    ADJUSTABLE HYPERSPECTRAL DETECTION CHIP ENHANCED BY MULTI-RESONANCE PLASMONIC MECHANISM

    公开(公告)号:US20210033462A1

    公开(公告)日:2021-02-04

    申请号:US16975400

    申请日:2018-05-28

    Abstract: An adjustable hyperspectral detection chip enhanced by a multi-resonance plasmonic mechanism. The detection chip consists of an array of metal nanonail resonator detection units. Each detection unit (1) comprises: a bottom electrode (2), a semiconductor material layer (3), a spacer layer (4), a nanonail array (5), a control material layer (6), a top electrode (7), a peripheral control signal (8), and a driving circuit (9). The positional relationship from top to bottom is the top electrode (7), the control material layer (6), the nanonail array (5), the spacer layer (4), the semiconductor material layer (3), and the bottom electrode (2). The nanonail array (5) is loaded inside the control material layer (6), and the peripheral control signal (8) and the driving circuit (9) are connected to both sides of the control material layer (6).

    SURFACE PLASMON-SEMICONDUCTOR HETEROJUNCTION RESONANT OPTOELECTRONIC DEVICE AND PREPARATION METHOD THEREFOR

    公开(公告)号:US20210050464A1

    公开(公告)日:2021-02-18

    申请号:US16970638

    申请日:2018-05-28

    Abstract: A surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof are provided. A surface ligand molecule is modified on a plasmonic nanostructure, a plasmonic crystal face structure is bound to the surface ligand molecule, a semiconductor nanostructure seed crystal is located on the plasmonic crystal face structure, a one-dimensional semiconductor nanostructure is located on the semiconductor nanostructure seed crystal, and all parts are in tight contact. The heterogeneous integration material achieves a lattice match at an interface, greatly reduces a loss caused by defects and rough crystal faces, and can achieve direct coupling of a surface plasmon mode and an optical mode. The heterogeneous integration material has a large application prospect in the fields of a nanolaser, a nano heat source and photoelectric detection and photocatalysis.

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