公开(公告)号：US20140203406A1

公开(公告)日：2014-07-24

申请号：US14240287

申请日：2012-08-14

Applicant: SOUTHEAST UNIVERSITY

Inventor： Longxing Shi ,  Qinsong Qian ,  Weifeng Sun ,  Jing Zhu ,  Xianguo Huang ,  Shengli Lu

IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/761

CPC classification number: H01L29/0646 ,  H01L21/265 ,  H01L21/761 ,  H01L21/823481 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/7835

Abstract: An isolation structure of a high-voltage driving circuit includes a P-type substrate and a P-type epitaxial layer; a high voltage area, a low voltage area and a high and low voltage junction terminal area are arranged on the P-type epitaxial layer; a first P-type junction isolation area is arranged between the high and low voltage junction terminal area and the low voltage area, and a high-voltage insulated gate field effect tube is arranged between the high voltage area and the low voltage area; two sides of the high-voltage insulated gate field effect tube and an isolation structure between the high-voltage insulated gate field effect tube and a high side area are formed as a second P-type junction isolation area.

Abstract translation: 高电压驱动电路的隔离结构包括P型衬底和P型外延层; 在P型外延层上布置有高电压区域，低电压区域和高低压端子区域; 在高低压区和低电压区之间设置第一P型结隔离区，高电压区与低压区之间设置高压绝缘栅场效应管; 高压绝缘栅场效应管的两侧和高压绝缘栅场效应管与高边区之间的隔离结构形成为第二P型结隔离区。