公开(公告)号：US11894458B2

公开(公告)日：2024-02-06

申请号：US17762206

申请日：2020-09-25

申请人： SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

发明人： Jiaxing Wei ,  Qichao Wang ,  Kui Xiao ,  Dejin Wang ,  Li Lu ,  Ling Yang ,  Ran Ye ,  Siyang Liu ,  Weifeng Sun ,  Longxing Shi

IPC分类号： H01L29/78

CPC分类号： H01L29/7825

摘要： A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.