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    Transverse ultra-thin insulated gate bipolar transistor having high current density
    5.
    发明授权
    Transverse ultra-thin insulated gate bipolar transistor having high current density 有权
    具有高电流密度的横向超薄绝缘栅双极晶体管

    公开(公告)号：US09240469B2

    公开(公告)日：2016-01-19

    申请号：US14439715

    申请日：2012-12-27

    Applicant: SOUTHEAST UNIVERSITY

    Inventor： Weifeng Sun ,  Jing Zhu ,  Shen Xu ,  Qinsong Qian ,  Siyang Liu ,  Shengli Lu ,  Longxing Shi

    IPC: H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/49 ,  H01L29/10 ,  H01L29/08 ,  H01L23/528

    CPC classification number: H01L29/7394 ,  H01L23/528 ,  H01L29/0611 ,  H01L29/0696 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/0847 ,  H01L29/1008 ,  H01L29/4916 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A transverse ultra-thin insulated gate bipolar transistor having current density includes: a P substrate, where the P substrate is provided with a buried oxide layer thereon, the buried oxide layer is provided with an N epitaxial layer thereon, the N epitaxial layer is provided with an N well region and P base region therein, the P base region is provided with a first P contact region and an N source region therein, the N well region is provided with an N buffer region therein, the N well region is provided with a field oxide layer thereon, the N buffer region is provided with a P drain region therein, the N epitaxial layer is provided therein with a P base region array including a P annular base region, the P base region array is located between the N well region and the P base region, the P annular base region is provided with a second P contact region and an N annular source region therein, and the second P contact region is located in the N annular source region. The present invention greatly increases current density of a transverse ultra-thin insulated gate bipolar transistor, thus significantly improving the performance of an intelligent power module.

    Abstract translation: 具有电流密度的横向超薄绝缘栅双极晶体管包括：P基板，其中P基板在其上设置有掩埋氧化物层，所述掩埋氧化物层在其上设置有N外延层，提供N外延层 在其中具有N阱区域和P基极区域，P基极区域中设置有第一P接触区域和N源极区域，N阱区域中设置有N个缓冲区域，N阱区域设置有 在其上的场氧化物层，N缓冲区在其中设置有P漏极区，N外延层中设置有包括P环状基极区的P基区阵列，P基区阵列位于N阱之间 区域和P基区域中，P环状基部区域设置有第二P接触区域和N环状源极区域，第二P接触区域位于N环状源极区域中。 本发明大大增加了横向超薄绝缘栅双极晶体管的电流密度，从而显着提高了智能功率模块的性能。

    Deep neural network hardware accelerator based on power exponential quantization
    6.
    发明授权
    Deep neural network hardware accelerator based on power exponential quantization 有权

    公开(公告)号：US12154026B2

    公开(公告)日：2024-11-26

    申请号：US17284480

    申请日：2020-01-09

    Applicant: SOUTHEAST UNIVERSITY

    Inventor： Shengli Lu ,  Wei Pang ,  Ruili Wu ,  Yingbo Fan ,  Hao Liu ,  Cheng Huang

    IPC: G06N3/06 ,  G06F5/01 ,  G06F7/552 ,  G06F7/556 ,  G06F9/50 ,  G06N3/063

    Abstract: A deep neural network hardware accelerator comprises: an AXI-4 bus interface, an input cache area, an output cache area, a weighting cache area, a weighting index cache area, an encoding module, a configurable state controller module, and a PE array. The input cache area and the output cache area are designed as a line cache structure; an encoder encodes weightings according to an ordered quantization set, the quantization set storing the possible value of the absolute value of all of the weightings after quantization. During the calculation of the accelerator, the PE unit reads data from the input cache area and the weighting index cache area to perform shift calculation, and sends the calculation result to the output cache area. The accelerator uses shift operations to replace floating point multiplication operations, reducing the requirements for computing resources, storage resources, and communication bandwidth, and increasing the calculation efficiency of the accelerator.

    High-current N-type silicon-on-insulator lateral insulated-gate bipolar transistor
    7.
    发明授权
    High-current N-type silicon-on-insulator lateral insulated-gate bipolar transistor 有权
    大电流N型绝缘体上半导体绝缘栅双极晶体管

    公开(公告)号：US09159818B2

    公开(公告)日：2015-10-13

    申请号：US14349632

    申请日：2012-10-24

    Applicant: SOUTHEAST UNIVERSITY

    Inventor： Weifeng Sun ,  Siyang Liu ,  Jing Zhu ,  Qinsong Qian ,  Shen Xu ,  Shengli Lu ,  Longxing Shi

    IPC: H01L27/24 ,  H01L29/739 ,  H01L29/40 ,  H01L27/12 ,  H01L29/06 ,  H01L27/06

    CPC classification number: H01L29/7394 ,  H01L27/0623 ,  H01L27/1203 ,  H01L29/0638 ,  H01L29/404

    Abstract: A high-current, N-type silicon-on-insulator lateral insulated-gate bipolar transistor, including: a P-type substrate, a buried-oxide layer disposed on the P-type substrate, an N-type epitaxial layer disposed on the oxide layer, and an N-type buffer trap region. A P-type body region and an N-type central buffer trap region are disposed inside the N-type epitaxial layer; a P-type drain region is disposed in the buffer trap region; N-type source regions and a P-type body contact region are disposed in the P-type body region; an N-type base region and a P-type emitter region are disposed in the buffer trap region; gate and field oxide layers are disposed on the N-type epitaxial layer; polycrystalline silicon gates are disposed on the gate oxide layers; and a passivation layer and metal layers are disposed on the surface of the symmetrical transistor. P-type emitter region output and current density are improved without increasing the area of the transistor.

    Abstract translation: 一种高电流，N型绝缘体上的横向绝缘栅双极晶体管，包括：P型衬底，设置在P型衬底上的掩埋氧化物层，设置在P型衬底上的N型外延层 氧化物层和N型缓冲阱捕获区。 P型体区域和N型中央缓冲区捕获区域设置在N型外延层内部; P型漏极区域设置在缓冲陷阱区域中; N型源极区域和P型体接触区域设置在P型体区域中; N型基极区域和P型发射极区域设置在缓冲陷阱区域中; 栅极和场氧化物层设置在N型外延层上; 多晶硅栅极设置在栅极氧化物层上; 并且钝化层和金属层设置在对称晶体管的表面上。 改善P型发射极区域的输出和电流密度，而不增加晶体管的面积。

    ISOLATION STRUCTURE OF HIGH-VOLTAGE DRIVING CIRCUIT
    8.
    发明申请
    ISOLATION STRUCTURE OF HIGH-VOLTAGE DRIVING CIRCUIT 有权
    高压驱动电路隔离结构

    公开(公告)号：US20140203406A1

    公开(公告)日：2014-07-24

    申请号：US14240287

    申请日：2012-08-14

    Applicant: SOUTHEAST UNIVERSITY

    Inventor： Longxing Shi ,  Qinsong Qian ,  Weifeng Sun ,  Jing Zhu ,  Xianguo Huang ,  Shengli Lu

    IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/761

    CPC classification number: H01L29/0646 ,  H01L21/265 ,  H01L21/761 ,  H01L21/823481 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/7835

    Abstract: An isolation structure of a high-voltage driving circuit includes a P-type substrate and a P-type epitaxial layer; a high voltage area, a low voltage area and a high and low voltage junction terminal area are arranged on the P-type epitaxial layer; a first P-type junction isolation area is arranged between the high and low voltage junction terminal area and the low voltage area, and a high-voltage insulated gate field effect tube is arranged between the high voltage area and the low voltage area; two sides of the high-voltage insulated gate field effect tube and an isolation structure between the high-voltage insulated gate field effect tube and a high side area are formed as a second P-type junction isolation area.

    Abstract translation: 高电压驱动电路的隔离结构包括P型衬底和P型外延层; 在P型外延层上布置有高电压区域，低电压区域和高低压端子区域; 在高低压区和低电压区之间设置第一P型结隔离区，高电压区与低压区之间设置高压绝缘栅场效应管; 高压绝缘栅场效应管的两侧和高压绝缘栅场效应管与高边区之间的隔离结构形成为第二P型结隔离区。

    HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
    10.
    发明申请
    HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIPOLAR TRANSISTOR 有权
    高电流N型绝缘子硅酸盐绝缘栅双极晶体管

    公开(公告)号：US20140306266A1

    公开(公告)日：2014-10-16

    申请号：US14349632

    申请日：2012-10-24

    Applicant: SOUTHEAST UNIVERSITY

    Inventor： Weifeng Sun ,  Siyang Liu ,  Jing Zhu ,  Qinsong Qian ,  Shen Xu ,  Shengli Lu ,  Longxing Shi

    IPC: H01L29/739 ,  H01L27/12 ,  H01L27/06

    CPC classification number: H01L29/7394 ,  H01L27/0623 ,  H01L27/1203 ,  H01L29/0638 ,  H01L29/404

    Abstract: A high-current, N-type silicon-on-insulator lateral insulated-gate bipolar transistor, including: a P-type substrate, a buried-oxide layer disposed on the P-type substrate, an N-type epitaxial layer disposed on the oxide layer, and an N-type buffer trap region. A P-type body region and an N-type central buffer trap region are disposed inside the N-type epitaxial layer; a P-type drain region is disposed in the buffer trap region; N-type source regions and a P-type body contact region are disposed in the P-type body region; an N-type base region and a P-type emitter region are disposed in the buffer trap region; gate and field oxide layers are disposed on the N-type epitaxial layer; polycrystalline silicon gates are disposed on the gate oxide layers; and a passivation layer and metal layers are disposed on the surface of the symmetrical transistor. P-type emitter region output and current density are improved without increasing the area of the transistor.

    Abstract translation: 一种高电流，N型绝缘体上的横向绝缘栅双极晶体管，包括：P型衬底，设置在P型衬底上的掩埋氧化物层，设置在P型衬底上的N型外延层 氧化物层和N型缓冲阱捕获区。 P型体区域和N型中央缓冲区捕获区域设置在N型外延层内部; P型漏极区域设置在缓冲陷阱区域中; N型源极区域和P型体接触区域设置在P型体区域中; N型基极区域和P型发射极区域设置在缓冲陷阱区域中; 栅极和场氧化物层设置在N型外延层上; 多晶硅栅极设置在栅极氧化物层上; 并且钝化层和金属层设置在对称晶体管的表面上。 改善P型发射极区域的输出和电流密度，而不增加晶体管的面积。

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