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公开(公告)号:US20230019004A1
公开(公告)日:2023-01-19
申请号:US17762206
申请日:2020-09-25
Applicant: SOUTHEAST UNIVERSITY , CSMC TECHNOLOGIES FAB2 CO., LTD.
Inventor: Jiaxing WEI , Qichao WANG , Kui XIAO , Dejin WANG , Li LU , Ling YANG , Ran YE , Siyang LIU , Weifeng SUN , Longxing SHI
IPC: H01L29/78
Abstract: A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.