公开(公告)号：US20190393044A1

公开(公告)日：2019-12-26

申请号：US16447851

申请日：2019-06-20

Applicant: SPTS Technologies Limited

Inventor： HUMA ASHRAF ,  KEVIN RIDDELL ,  ALEX WOOD

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67

Abstract: According to the invention there is provided a method of plasma etching a silicon-based compound semiconductor substrate, the method comprising providing the substrate within an etch chamber and performing a cyclical process on the substrate, each cycle comprising supplying an etchant gas into the chamber, energising the gas into a plasma, and performing an etch step on the substrate using the plasma; and performing a desorption step, wherein during the desorption step, the only gas that is supplied into the etch chamber is an inert gas, so as to allow reactive species that have adsorbed to the surface of the substrate during the etch step to desorb from the surface of the substrate.