公开(公告)号：US20190393044A1

公开(公告)日：2019-12-26

申请号：US16447851

申请日：2019-06-20

Applicant: SPTS Technologies Limited

Inventor： HUMA ASHRAF ,  KEVIN RIDDELL ,  ALEX WOOD

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67

Abstract: According to the invention there is provided a method of plasma etching a silicon-based compound semiconductor substrate, the method comprising providing the substrate within an etch chamber and performing a cyclical process on the substrate, each cycle comprising supplying an etchant gas into the chamber, energising the gas into a plasma, and performing an etch step on the substrate using the plasma; and performing a desorption step, wherein during the desorption step, the only gas that is supplied into the etch chamber is an inert gas, so as to allow reactive species that have adsorbed to the surface of the substrate during the etch step to desorb from the surface of the substrate.

公开(公告)号：US20180144911A1

公开(公告)日：2018-05-24

申请号：US15690414

申请日：2017-08-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： HUMA ASHRAF ,  KEVIN RIDDELL ,  ROLAND MUMFORD ,  GRANT BALDWIN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32917 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67288

Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.

公开(公告)号：US20150179468A1

公开(公告)日：2015-06-25

申请号：US14577442

申请日：2014-12-19

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： HUMA ASHRAF

IPC: H01L21/3065 ,  H01L21/02 ,  H01L23/48 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/30655 ,  H01L21/0212 ,  H01L21/0334 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/76816 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of etching a feature in a substrate includes forming a mask structure over the substrate, the mask structure defining at least one re-entrant opening, etching the substrate through the opening to form the feature using a cyclic etch and deposition process, and removing the mask.

Abstract translation: 蚀刻衬底中的特征的方法包括在衬底上形成掩模结构，掩模结构限定至少一个重新开口，通过开口蚀刻衬底以使用循环蚀刻和沉积工艺形成特征，并且去除 面具。

公开(公告)号：US20160126129A1

公开(公告)日：2016-05-05

申请号：US14925715

申请日：2015-10-28

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： ANTHONY BARKER ,  HUMA ASHRAF ,  BRIAN KIERNAN

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/68728 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68721

Abstract: A clamp assembly is for clamping an outer peripheral portion of a substrate to a support in a plasma processing chamber. An RF bias power is applied to the support during the plasma processing of the substrate. The clamp assembly includes an outer clamp member, and an inner clamp member which is received by the outer clamp member, the inner clamp member defining an aperture which exposes the substrate to the plasma processing. The outer clamp member has an inner portion terminating in an inner edge, wherein the inner portion is spaced apart from the inner clamp member.

Abstract translation: 夹具组件用于将衬底的外周部分夹持到等离子体处理室中的支撑件上。 在衬底的等离子体处理期间将RF偏置功率施加到支撑件。 夹紧组件包括外部夹紧构件和内部夹紧构件，其由外部夹紧构件接收，内部夹具构件限定将衬底暴露于等离子体处理的孔。 外部夹紧构件具有终止于内部边缘的内部部分，其中内部部分与内部夹紧构件间隔开。