公开(公告)号：US20250006537A1

公开(公告)日：2025-01-02

申请号：US18393632

申请日：2023-12-21

Applicant: SPTS Technologies Limited

Inventor： Adam S. BEACHEY

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065

Abstract: During a plasma etching of a semiconductor substrate, a cooling gas is supplied to a lower surface of the semiconductor substrate at an associated pressure. The electrostatic chuck is switched between a first bipolar mode of operation in which a positive voltage is applied to a first electrode and a negative voltage is applied to a second electrode and a second bipolar mode of operation in which a negative voltage is applied to the first electrode and a positive voltage is applied to the second electrode. The pressure of the cooling gas is reduced when the ESC is switched between the first and second bipolar modes of operation with respect to the pressure at other times during the plasma etching so that the semiconductor substrate remains positioned on the substrate support.

公开(公告)号：US20240006159A1

公开(公告)日：2024-01-04

申请号：US18123954

申请日：2023-03-20

Applicant: SPTS Technologies Limited

Inventor： Weikang FAN ,  Adam S. BEACHEY

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J2237/334

Abstract: A method of plasma etching an indium-containing compound semiconductor substrate and plasma etch apparatus for plasma etching an indium-containing semiconductor substrate can use a primary plasma etching process and a secondary plasma etching process. The primary plasma etching process uses a halogen-containing component and a nitrogen-containing component. The secondary plasma etching process uses an oxygen-containing component.