公开(公告)号：US20240006159A1

公开(公告)日：2024-01-04

申请号：US18123954

申请日：2023-03-20

Applicant: SPTS Technologies Limited

Inventor： Weikang FAN ,  Adam S. BEACHEY

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J2237/334

Abstract: A method of plasma etching an indium-containing compound semiconductor substrate and plasma etch apparatus for plasma etching an indium-containing semiconductor substrate can use a primary plasma etching process and a secondary plasma etching process. The primary plasma etching process uses a halogen-containing component and a nitrogen-containing component. The secondary plasma etching process uses an oxygen-containing component.