公开(公告)号：US20240355760A1

公开(公告)日：2024-10-24

申请号：US18302503

申请日：2023-04-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Peik Eng Ooi ,  Gai Leong Lai

IPC: H01L23/00

CPC classification number: H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/19 ,  H01L2224/2105 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079

Abstract: A semiconductor device has a substrate and a first RDL formed over the substrate. A second RDL is formed over the first RDL with a first conductive via electrically connecting the first RDL and second RDL and a first opening formed in the second RDL around the first conductive via for stress relief. The first opening formed in the second RDL can have a semi-circle shape or a plurality of semi-circles or segments. A third RDL is formed over the second RDL with a second conductive via electrically connecting the second RDL and third RDL and a second opening formed in the third RDL around the second conductive via for stress relief. The first opening is offset from the second opening. A plurality of first openings can be formed around the first conductive via for stress relief, each offset from one another.