SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

    公开(公告)号:US20230411304A1

    公开(公告)日:2023-12-21

    申请号:US18313316

    申请日:2023-05-06

    CPC classification number: H01L23/552 H01L21/4814

    Abstract: A semiconductor device and a method for making the same are provided. The semiconductor device includes: a substrate including a substrate top surface and a substrate bottom surface; an electronic component mounted on the substrate top surface; a bottom encapsulant disposed on the substrate top surface and encapsulating the electronic component; a top encapsulant disposed on the bottom encapsulant; an internal shielding layer disposed between the bottom encapsulant and the top encapsulant, wherein a projection of the internal shielding layer onto the substrate top surface overlaps with the electronic component, the internal shielding layer has an internal shielding layer lateral surface, and a portion of the internal shielding layer lateral surface is exposed from the bottom encapsulant and the top encapsulant; and an external shielding layer covering the bottom encapsulant and the top encapsulant and contacting with the exposed portion of the internal shielding layer lateral surface.

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