PARTIALLY SHIEDED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

    公开(公告)号:US20230402400A1

    公开(公告)日:2023-12-14

    申请号:US18332779

    申请日:2023-06-12

    CPC classification number: H01L23/552 H01L21/56

    Abstract: A method for making a semiconductor device comprises: providing a substrate having a first region and a second region, wherein the first region comprises at least one electronic component and a conductive pattern formed therein; forming a conductive bar on the conductive pattern; forming an encapsulant layer in the first region of the substrate to cover the at least one electronic component, the conductive bar and the conductive pattern; removing a portion of the encapsulant layer that is above the conductive bar to expose the conductive bar and separate the encapsulant layer into a main portion and a peripheral portion; disposing a deposition mask above the substrate to cover the second region; and depositing a conductive material on the substrate to form a shielding layer on the substrate which is not covered by the deposition mask.

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