公开(公告)号：US20230411305A1

公开(公告)日：2023-12-21

申请号：US18315479

申请日：2023-05-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeongHwan PARK ,  Bom LEE ,  KyoungHee PARK

IPC: H01L23/552 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L23/3121 ,  H01L2225/06537 ,  H01L21/56 ,  H01L25/0657

Abstract: A method for selectively forming a shielding layer on a semiconductor device comprises: attaching a tape stack onto a predetermined area of a substrate of the semiconductor device, wherein the tape stack comprises a lower tape layer that covers the predetermined area and an upper tape layer that extends beyond the predetermined area and overhangs above an intermediate area adjacent to the predetermined area; applying a shielding layer to the substrate of the semiconductor device; and removing the tape stack and a portion of the shielding layer formed on the tape stack from the substrate of the semiconductor device.