公开(公告)号：US11349279B2

公开(公告)日：2022-05-31

申请号：US16775200

申请日：2020-01-28

Applicant: STC.UNM

Inventor： Marek Osinski ,  Alexander Neumann ,  Gennady A. Smolyakov

IPC: H01S5/024 ,  H01S5/34 ,  H01S5/026 ,  H01S5/347 ,  H01S3/04

Abstract: A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

公开(公告)号：US20210151953A1

公开(公告)日：2021-05-20

申请号：US16081028

申请日：2017-02-28

Applicant: STC.UNM

Inventor： Marek Osinski ,  Gennady A. Smolyakov

IPC: H01S5/10 ,  H01S5/40 ,  H01S5/12 ,  H01S5/0225 ,  H01S5/02 ,  H01S5/026

Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

公开(公告)号：US10992106B1

公开(公告)日：2021-04-27

申请号：US16414297

申请日：2019-05-16

Applicant: STC.UNM

Inventor： Marek Osinski ,  Gennady A. Smolyakov

IPC: H01S5/062 ,  H01S5/06 ,  H01S5/04 ,  H01S5/10 ,  H01S5/042

Abstract: A method for generating single optical pulses of picosecond-range duration with suppressed transient emission tails.

公开(公告)号：US20200244038A1

公开(公告)日：2020-07-30

申请号：US16775200

申请日：2020-01-28

Applicant: STC.UNM

Inventor： Marek Osinski ,  Alexander Neumann ,  Gennady A. Smolyakov

IPC: H01S5/024 ,  H01S5/34 ,  H01S5/347 ,  H01S5/026

Abstract: A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

公开(公告)号：US11239634B2

公开(公告)日：2022-02-01

申请号：US16081028

申请日：2017-02-28

Applicant: STC.UNM

Inventor： Marek Osinski ,  Gennady A. Smolyakov

IPC: H01S5/10 ,  H01S5/0225 ,  H01S5/02 ,  H01S5/026 ,  H01S5/12 ,  H01S5/22 ,  H01S5/40 ,  H01S5/042 ,  H01S5/125 ,  H01S5/30 ,  H01S5/343

Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

公开(公告)号：US10770861B1

公开(公告)日：2020-09-08

申请号：US16413570

申请日：2019-05-15

Applicant: STC.UNM

Inventor： Marek Osinski ,  Gennady A. Smolyakov

IPC: H01S5/024 ,  H01S5/026 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34

Abstract: A light-emitting device having a self-cooled semiconductor laser having a laser cavity.