公开(公告)号：US20160190199A1

公开(公告)日：2016-06-30

申请号：US14587401

申请日：2014-12-31

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François ROY ,  Frédéric LALANNE ,  Pierre Emmanuel Marie MALINGE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

Abstract translation: 图像传感器装置可以包括以行和列排列的图像感测像素阵列。 每个图像感测像素可以包括图像感测光电二极管，耦合到图像感测光电二极管的第一源极跟随器晶体管，以及耦合到图像感测光电二极管的开关。 每个图像传感器装置可以包括耦合到开关的第二源极跟随器晶体管，以及耦合到第一和第二源极跟随器晶体管的行选择晶体管。

公开(公告)号：US20170134683A1

公开(公告)日：2017-05-11

申请号：US15077023

申请日：2016-03-22

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François GUYADER ,  François ROY

IPC: H04N5/374 ,  H04N5/353 ,  H04N5/378

CPC classification number: H04N5/3742 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/353 ,  H04N5/378

Abstract: A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

公开(公告)号：US20170005130A1

公开(公告)日：2017-01-05

申请号：US15266405

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François ROY ,  Frédéric LALANNE ,  Pierre Emmanuel Marie MALINGE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

公开(公告)号：US20170005129A1

公开(公告)日：2017-01-05

申请号：US15266345

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François ROY ,  Frédèric LALANNE ,  Pierre Emmanuel Marie MALINGE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

Abstract translation: 图像传感器装置可以包括以行和列排列的图像感测像素阵列。 每个图像感测像素可以包括图像感测光电二极管，耦合到图像感测光电二极管的第一源极跟随器晶体管，以及耦合到图像感测光电二极管的开关。 每个图像传感器装置可以包括耦合到开关的第二源极跟随器晶体管，以及耦合到第一和第二源极跟随器晶体管的行选择晶体管。

公开(公告)号：US20160118432A1

公开(公告)日：2016-04-28

申请号：US14919836

申请日：2015-10-22

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives ,  STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (GRENOBLE 2) SAS

Inventor： Yvon CAZAUX ,  François ROY ,  Arnaud LAFLAQUIERE ,  Marie GUILLON

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/1463

Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

Abstract translation: 布置在具有前表面和后表面的半导体衬底的内部和顶部的图像传感器，所述传感器包括多个像素，每个像素包括：感光区域，读取区域和在感光体之间延伸的存储区域 区域和阅览区域; 垂直绝缘电极，包括在感光区域和存储区域之间的转印开口; 以及以下中的至少一个绝缘元件：a）在感光区域和存储区域的表面下延伸并且其前表面与电极的后表面接触的绝缘材料层; 和b）在开口中或开口下方垂直延伸的绝缘壁。