公开(公告)号：US20240304237A1

公开(公告)日：2024-09-12

申请号：US18583574

申请日：2024-02-21

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Christophe GONCALVES ,  Marc BATTISTA ,  Francois TAILLIET

IPC: G11C11/4091 ,  G11C11/4096 ,  G11C11/4099

CPC classification number: G11C11/4091 ,  G11C11/4096 ,  G11C11/4099

Abstract: The present disclosure relates to a memory device including a sense amplifier, wherein the amplifier comprises a first inverter, wherein an input and an output of the inverter are coupled to a first transistor configured to be switched on during a step of pre-charging of a memory cell.

公开(公告)号：US20240304224A1

公开(公告)日：2024-09-12

申请号：US18583568

申请日：2024-02-21

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Christophe GONCALVES ,  Marc BATTISTA ,  Francois TAILLIET

IPC: G11C7/08 ,  G11C7/10

CPC classification number: G11C7/08 ,  G11C7/1048 ,  G11C7/1069

Abstract: The present disclosure relates to a method of reading a word in a memory device, wherein the word is comprised in a first set of words that can be read by the memory device, each word of the first set comprising at least one byte of data, each word being contained in memory cells, the method comprising a pre-charging step during which the first set and at least a second set of words are pre-charged, a first terminal of each cell of the first and second sets being floating during the pre-charging step.