公开(公告)号：US20220393022A1

公开(公告)日：2022-12-08

申请号：US17730895

申请日：2022-04-27

Applicant: STMicroelectronics PTE LTD ,  STMicroelectronics (Tours) SAS

Inventor： Shin Phay LEE ,  Voon Cheng NGWAN ,  Frederic LANOIS ,  Fadhillawati TAHIR ,  Ditto ADNAN

IPC: H01L29/739 ,  H01L29/40 ,  H01L29/66

Abstract: A trench in a semiconductor substrate is lined with a first insulation layer. A hard mask layer deposited on the first insulation layer is used to control performance of an etch that selectively removes a first portion of the first insulating layer from an upper trench portion while leaving a second portion of first insulating layer in a lower trench portion. After removing the hard mask layer, an upper portion of the trench is lined with a second insulation layer. An opening in the trench that includes a lower open portion delimited by the second portion of first insulating layer in the lower trench portion and an upper open portion delimited by the second insulation layer at the upper trench portion, is then filled by a single deposition of polysilicon material forming a unitary gate/field plate conductor of a field effect rectifier diode.

公开(公告)号：US20220123155A1

公开(公告)日：2022-04-21

申请号：US17566435

申请日：2021-12-30

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Frederic LANOIS

IPC: H01L29/861 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.