公开(公告)号：US11881413B2

公开(公告)日：2024-01-23

申请号：US18153929

申请日：2023-01-12

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Michael De Cruz ,  Olivier Ory

IPC: H01L21/4763 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L21/4853 ,  H01L21/56

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

公开(公告)号：US11574816B2

公开(公告)日：2023-02-07

申请号：US17104869

申请日：2020-11-25

Applicant: STMicroelectronics (Tours) SAS

Inventor： Michael De Cruz ,  Olivier Ory

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.